Browsing by Subject "Thick epitaxial layers"

Filter results by typing the first few letters
Now showing 1 - 1 of 1
  • Thumbnail Image
    ItemOpen Access
    Integrated AlGaN quadruple-band ultraviolet photodetectors
    (IOP Publishing, 2012-04-27) Gökkavas, M.; Butun, S.; Caban, P.; Strupinski, W.; Özbay, Ekmel
    Monolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15nm for sample A, which incorporated five 1000nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500nm thick epitaxial layers.