Browsing by Subject "Strontium compounds"

Filter results by typing the first few letters
Now showing 1 - 5 of 5
  • Thumbnail Image
    ItemOpen Access
    Analysis of electrical characteristics and magnetic field dependences of YBCO step edge and bicrystal grain boundary junctions for rf-SQUID applications
    (Institute of Physics, 2004) Fardmanesh, M.; Schubert, J.; Akram, R.; Bick, M.; Banzet, M.; Zander, W.; Zhang, Y.; Krause, H-J.
    The dc characteristics and magnetic field dependences of Y-Ba-Cu-O bicrystal grain boundary junctions (BGBJs) and step edge junctions (SEJs) were investigated for fabrication of rf-SQUIDs. Test junctions with up to 8 μm widths as well as the junctions of the two types of junction-based rf-SQUID were studied. The SEJs typically showed lower Jc and higher ρN as compared to the BGBJs, resulting in close IcRN products. All the BGBJs showed classical field dependent Ic following their junction width, resembling Fraunhofer patterns. The field sensitivity of the BGBJs' Uc led to low yield submicron BGBJ rf-SQUIDs partially impaired by the Earth's magnetic field. Two major behaviours of low and high field dependences of Ic were observed for the SEJs. Only the low field-sensitive SEJs resulted in micron size junction rf-SQUIDs not impaired by the Earth's magnetic field. The low field-sensitive SEJs led to low I/f noise magnetically stable rf-SQUIDs appropriate for applications in unshielded environments at 77 K.
  • Thumbnail Image
    ItemOpen Access
    Analytic modeling of patterned high-Tc superconductive bolometers: film and substrate interface effects
    (SPIE, 1998) Fardmanesh, Mehdi; Rothwarf, A.
    Superconducting film and substrate interface effects on the response of superconductive edge-transition bolometers are modeled with a one dimensional thermal model in closed form, for samples with large area patterns compared to the substrate thickness. The results from the model agree with experimental results on samples made of meander line patterned granular YBCO films on crystalline substrates, in both the magnitude and phase of the response versus modulation frequency up to about 100 KHz, the limit of the characterization setup. Using the fit of the calculated frequency response curves obtained from the model to the measured ones, values of the film-substrate and substrate-holder thermal boundary resistance, heat capacity of the superconducting film, and the thermal parameters of the substrate materials could be investigated. While the calculated magnitude and phase of the response of the SrTiO3 substrate samples obtained from the model is in a very good agreement with the measured values, the calculated response of the LaAlO3 and MgO substrate samples deviate slightly from the measured values at very low frequencies, increasing with an increase in the thermal conductivity of the substrate material. Using the fit of the calculated response to the measured values, film-substrate thermal boundary resistances in the range of 4.4* 10-3 to 4.4* 10-2 K-cm2-w-1 are obtained for different substrate materials. The effect of substrate optical absorption in the response of the samples is also investigated.
  • Thumbnail Image
    ItemOpen Access
    Direct magnetic imaging of ferromagnetic domain structures by room temperature scanning hall probe microscopy using a bismuth micro-Hall probe
    (Japan Society of Applied Physics, 2001) Sandhu, A.; Masuda, H.; Oral, A.; Bending, S. J.
    A bismuth micro-Hall probe sensor with an integrated scanning tunnelling microscope tip was incorporated into a room temperature scanning Hall probe microscope system and successfully used for the direct magnetic imaging of microscopic domains of low coercivity perpendicular garnet thin films and demagnetized strontium ferrite permanent magnets. At a driving current of 800 μA, the Hall coefficient, magnetic field sensitivity and spatial resolution of the Bi probe were 3.3 × 10-4 Ω/G, 0.38 G/√Hz and ∼ 2.8 μm, respectively. The room temperature magnetic field sensitivity of the Bi probe was comparable to that of a semiconducting 1.2μm GaAs/AlGaAs heterostructure micro-Hall probe, which exhibited a value of 0.41 G/√Hz at a maximum driving current of 2μA.
  • Thumbnail Image
    ItemOpen Access
    Electronic structure of conventional slater type antiferromagnetic insulators: AIrO3 (A=Sr, Ba) perovskites
    (Institute of Physics, 2022) Koc, Husnu; Mamedov, Amirullah M.; Özbay, Ekmel
    The structural, mechanical, and electronic properties of Perovskite BaIrO3 and SrIrO3 compounds based on the density functional theory (DFT) have been examined in four different structures (C2/c, R-3m, P6_3/mmc and Pm-3m) and Pnma structure, respectively. The spin polarized generalized gradient approximation has been used for modeling exchange-correlation effects. As a result of spin polarized calculations, it has been observed that BaIrO3 compound showed magnetic properties in C2/c and R-3m structures, but not in Pm-3m and P6_3/mmc structures. SrIrO3 compound also shows magnetic properties in Pnma structure. The elastic constants have been calculated using the strain-stress method and the other related quantities (the bulk modulus, shear modulus, Young's modulus, Poisson's ratio, anisotropy factor, sound velocities, and Debye temperature) have also been estimated. In electronic band structure calculations, while Pm-3m and P6_3/mmc structures of NaIrO3 compound are metallic and semiconductor (Eg = 1.190 eV indirect), respectively, while C2/c and R-3m structures showing magnetic properties are metallic in spin down state and semiconductor (Eg=0.992 eV indirect and Eg=0.665 eV direct, respectively) in the spin up state. The Pmna structure in the SrIrO3 compound is a semiconductor in both spin states (Eg=0.701 eV “0.632 eV” indirect in the spin up “spin down”). © 2022 Institute of Physics Publishing. All rights reserved.
  • Thumbnail Image
    ItemOpen Access
    Electronic structure of half-metallic ferromagnet Co2MnSi at high-pressure
    (Springer New York LLC, 2010) Gökoǧlu, G.; Gülseren, O.
    In this study, first principles calculation results of the half-metallic ferromagnetic Heusler compound Co2MnSi are presented. All calculations are based on the spin-polarized generalized gradient approximation (σ-GGA) of the density functional theory and ultrasoft pseudopotentials with plane wave basis. Electronic structure of related compound in cubic L21 structure is investigated up to 95 GPa uniform hydrostatic pressure. The half-metal to metal transition was observed around ∼70 GPa together with downward shift of the conduction band minimum (CBM) and a linear increase of direct band gap of minority spins at Γ-point with increasing pressure. The electronic density of states of minority spins at Fermi level, which are mainly due to the cobalt atoms, become remarkable with increasing pressure resulting a sharp decrease in spin polarization ratio. It can be stated that the pressure affects minority spin states rather than that of majority spins and lead to a slight reconstruction of minority spin states which lie below the Fermi level. In particular, energy band gap of minority spin states in equilibrium structure is obviously not destroyed, but the Fermi level is shifted outside the gap.