Browsing by Subject "Source and drains"
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Item Open Access Electronic transmittance phase extracted from mesoscopic interferometers(2012) Tolea, M.; Moldoveanu V.; Dinu I.V.; Tanatar, BilalThe usual experimental set-up for measuring the wave function phase shift of electrons tunneling through a quantum dot (QD) embedded in a ring (i.e., the transmittance phase) is the so-called 'open' interferometer as first proposed by Schuster et al. in 1997, in which the electrons back-scattered at source and the drain contacts are absorbed by additional leads in order to exclude multiple interference. While in this case one can conveniently use a simple two-path interference formula to extract the QD transmittance phase, the open interferometer has also a number of draw-backs, such as a reduced signal and some uncertainty regarding the effects of the extra leads. Here we present a meaningful theoretical study of the QD transmittance phase in 'closed' interferometers (i.e., connected only to source and drain leads). By putting together data from existing literature and giving some new proofs, we show both analytically and by numerical simulations that the existence of phase lapses between consecutive resonances of the 'bare' QD is related to the signs of the corresponding Fano parameters - of the QD + ring system. More precisely, if the Fano parameters have the same sign, the transmittance phase of the QD exhibits a π lapse. Therefore, closed mesoscopic interferometers can be used to address the 'universal phase lapse' problem. Moreover, the data from already existing Fano interference experiments from Kobayashi et al. in 2003 can be used to infer the phase lapses. © 2012 Tolea et al.Item Open Access High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration(IEEE, 2009) Yu, H.-Y.; Kobayashi, M.; Jung, W. S.; Okyay, Ali Kemal; Nishi, Y.; Saraswat, K. C.We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.