Browsing by Subject "Silicon on insulator technology"
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Item Open Access Design and fabrication of CSWAP gate based on nano-electromechanical systems(Springer, Cham, 2016) Yüksel, Mert; Erbil, Selçuk Oğuz; Arı, Atakan B.; Hanay, M. SelimIn order to reduce undesired heat dissipation, reversible logic offers a promising solution where the erasure of information can be avoided to overcome the Landauer limit. Among the reversible logic gates, Fredkin (CSWAP) gate can be used to compute any Boolean function in a reversible manner. To realize reversible computation gates, Nano-electromechanical Systems (NEMS) offer a viable platform, since NEMS can be produced en masse using microfabrication technology and controlled electronically at high-speeds. In this work-in-progress paper, design and fabrication of a NEMS-based implementation of a CSWAP gate is presented. In the design, the binary information is stored by the buckling direction of nanomechanical beams and CSWAP operation is accomplished through a mechanism which can selectively allow/block the forces from input stages to the output stages. The gate design is realized by fabricating NEMS devices on a Silicon-on-Insulator substrate. © Springer International Publishing Switzerland 2016.Item Open Access High-Q silicon-on-insulator optical rib waveguide racetrack resonators(Optical Society of American (OSA), 2005) Kiyat I.; Aydınlı, Atilla; Dagli, N.In this work, detailed design and realization of high quality factor (Q) racetrack resonators based on silicon-on-insulator rib waveguides are presented. Aiming to achieve critical coupling, suitable waveguide geometry is determined after extensive numerical studies of bending loss. The final design is obtained after coupling factor calculations and estimation of propagation loss. Resonators with quality factors (Q) as high as 119000 has been achieved, the highest Q value for resonators based on silicon-on-insulator rib waveguides to date with extinction ratios as large as 12 dB. © 2005 Optical Society of America.Item Open Access Polarization characteristics of compact SOI rib waveguide racetrack resonators(IEEE, 2005) Kiyat, I.; Aydınlı, Atilla; Dagli, N.We report on the development of compact optical racetrack resonators on silicon-on-insulator (SOI) rib waveguides. We make use of large-cross-section waveguides instead of photonic wire waveguides. We fabricated resonators with bending radii down to 20 μm and characterized for both transverse-electric and transverse-magnetic polarizations. Different polarization characteristics were analyzed and related to the modal shape of the SOI waveguide. These compact resonators show large free spectral ranges (3.0 nm), high finesse (19), and Q-factor (28 000) values.Item Open Access Practical multi-featured perfect absorber utilizing high conductivity silicon(Institute of Physics Publishing, 2016) Gok, A.; Yilmaz, M.; Bıyıklı, N.; Topallı, K.; Okyay, Ali KemalWe designed all-silicon, multi-featured band-selective perfect absorbing surfaces based on CMOS compatible processes. The center wavelength of the band-selective absorber can be varied between 2 and 22 μm while a bandwidth as high as 2.5 μm is demonstrated. We used a silicon-on-insulator (SOI) wafer which consists of n-type silicon (Si) device layer, silicon dioxide (SiO2) as buried oxide layer, and n-type Si handle layer. The center wavelength and bandwidth can be tuned by adjusting the conductivity of the Si device and handle layers as well as the thicknesses of the device and buried oxide layers. We demonstrate proof-of-concept absorber surfaces experimentally. Such absorber surfaces are easy to microfabricate because the absorbers do not require elaborate microfabrication steps such as patterning. Due to the structural simplicity, low-cost fabrication, wide spectrum range of operation, and band properties of the perfect absorber, the proposed multi-featured perfect absorber surfaces are promising for many applications. These include sensing devices, surface enhanced infrared absorption applications, solar cells, meta-materials, frequency selective sensors and modulators. © 2016 IOP Publishing Ltd.Item Open Access Pressure sensing using micromachined asymmetric integrated vertical coupler(IEEE, 2003) Kıyat, İsa; Kocabaş, Coşkun; Aydınlı, AtillaAnalysis of a novel pressure sensor based on a SOI asymmetric vertical coupler is presented. The integrated optical component is a coupler composed of a single mode low index waveguide and a thin silicon slab.