Browsing by Subject "Semiconductor metal boundaries"

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    Design, fabrication and characterization of high-performance solarblind AlGaN photodetectors
    (SPIE, 2005) Özbay, Ekmel
    Design, fabrication, and characterization of high-performance AlxGal-xN-based photodetectors for solar-blind applications are reported. AlxGal-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal (MSM) photodiodes. The resulting solar-blind AlGaN detectors exhibited low dark current, high detectivity, and high bandwidth.
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    Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN
    (AIP Publishing LLC, 2006) Bütün, S.; Gökkavas, M.; Yu, H.; Özbay, Ekmel
    Metal-semiconductor-metal photodetectors on semi-insulating GaN templates were demonstrated and compared with photodetectors fabricated on regular GaN templates. Samples were grown on a metal organic chemical vapor deposition system. Devices on semi-insulating template exhibited a dark current density of 1.96 × 10-10 A/cm2 at 50 V bias, which is four orders of magnitude lower compared with devices on regular template. Device responsivities were 101.80 and 88.63 A/W at 50 V bias for 360 nm ultraviolet illumination for semi-insulating and regular templates, respectively. Incident power as low as 3 pW was detectable using the devices that were fabricated on the semi-insulating template. © 2006 American Institute of Physics.