Browsing by Subject "Semiconductor device thermal factors"

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    Realistic channel temperature simulation of AlGaN/GaN high electron mobility transistors
    (IEEE, 2019) Odabaşı, Oğuz; Bütün, Bayram; Özbay, Ekmel
    In this work, the realistic channel temperature of AlGaN/GaN High Electron Mobility Transistors (HEMTs) is investigated by using 2D electrothermal and Finite Element Method (FEM) thermal simulations. By using a special method to map the position dependent heating in a device, more accurate results in channel temperature are achieved compared to the conventional FEM methods. With this method, larger device areas can be simulated more accurately with less complexity.