Browsing by Subject "Semiconductor device testing"
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Item Open Access Fabrication of high-speed resonant cavity enhanced schottky photodiodes(Institute of Electrical and Electronics Engineers, 1997-05) Özbay, Ekmel; Islam, M. S.; Onat, B.; Gökkavas, M.; Aytür, O.; Tuttle, G.; Towe, E.; Henderson, R. H.; Ünlü, M. S.We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In0.8Ga0.92As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.Item Open Access High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes(IEEE, 1998) Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan; Gökkavas, M.; Ulu, G.; Mirin, R.; Christensen, D. H.; Ünlü, M. S.; Özbay, EkmelWidely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity Bragg mirrors made of quarter-wave Al0.20Ga0.80As/AlAs stacks. Photoresponse and photospectral measurements were carried out. The tuning of the resonance wavelength within the Bragg mirror's upper and lower edges was observed. Quantum efficiency greater than 90% was demonstrated.