Browsing by Subject "Semiconductor compounds"

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    Green stimulated emission boosted by nonradiative resonant energy transfer from blue quantum dots
    (American Chemical Society, 2016) Gao, Y.; Yu, G.; Wang Y.; Dang C.; Sum, T. C.; Sun, H.; Demir, Hilmi Volkan
    Thanks to their tunability and versatility, the colloidal quantum dots (CQDs) made of II-VI semiconductor compound offer the potential to bridge the "green gap" in conventional semiconductors. However, when the CQDs are pumped to much higher initial excitonic states compared to their bandgap, multiexciton interaction is enhanced, leading to a much higher stimulated emission threshold. Here, to circumvent this drawback, for the first time, we show a fully colloidal gain in green enabled by a partially indirect pumping approach assisted by Förster resonance energy transfer process. By introducing the blue CQDs as exciton donors, the lasing threshold of the green CQDs, is reduced dramatically. The blue CQDs thus serve as an energy-transferring buffer medium to reduce excitation energy from pumping photons in a controlled way by injecting photoinduced excitons into green CQDs. Our newly developed colloidal pumping scheme could enable efficient CQD lasers of full visible colors by a single pump source and cascaded exciton transfer. This would potentially pave the way for an efficient multicolor laser for lighting and display applications.
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    Resonant Raman scattering near the free-to-bound transition in undoped p-GaSe
    (Wiley, 2001) Gasanly, N. M.; Aydınlı, A.; Özkan, H.
    Raman spectra of GaSe layered crystal have been measured using a He-Ne laser and temperature tuning the free-to-bound gap in the range 10-290 K. Resonance enhancement of E’’(2) mode has been observed for both incident and scattered photon energies equal to the free-to-bound transition energy.
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    Thermally stimulated current observation of trapping centers in undoped GaSe layered single crystals
    (Wiley, 2001) Gasanly, N. M.; Aydınlı, A.; Salihoglu, Ö.
    Undoped p-GaSe layered single crystals were grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10-300 K were performed at a heating rate of 0.18 K/s. The analysis of the data revealed three trap levels at 0.02, 0.10 and 0.26 eV. The calculation for these traps yielded 8.8 × 10-27, 1.9 × 10-25, and 3.2 × 10-21 cm2 for capture cross sections and 3.2 × 1014, 1.1 × 1016, and 1.2 × 1016 cm-3 for the concentrations, respectively.