Browsing by Subject "Semiconductor Quantum Wells"

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    ItemOpen Access
    Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2-2) semipolar versus (0001) polar planes
    (AIP Publishing, 2014) Ji Y.; Liu W.; Erdem, T.; Chen R.; Tan S.T.; Zhang Z.-H.; Ju, Z.; Zhang X.; Sun, H.; Sun, X. W.; Zhao Y.; DenBaars, S. P.; Nakamura, S.; Demir, Hilmi Volkan
    The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (11 (2) over bar2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.
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    ItemOpen Access
    On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer
    (AIP Publishing, 2014) Zhang Z.-H.; Ji Y.; Liu W.; Tan S.T.; Kyaw, Z.; Ju, Z.; Zhang X.; Hasanov N.; Lu S.; Zhang, Y.; Zhu B.; Sun, X. W.; Demir, Hilmi Volkan
    In this work, the origin of electron blocking effect of n-type Al 0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes. © 2014 AIP Publishing LLC.