Browsing by Subject "Schottky diode"

Now showing 1 - 4 of 4

Open Access
High-speed high-efficiency resonant cavity enhanced photodiodes
(Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States, 1999) Özbay, Ekmel; Kimukin, I.; Bıyıklı, N.; Aytür, O.; Gökkavas, M.; Ulu, G.; Ünlü, M. S.; Mirin, R. P.; Bertness, K. A.; Christensen, D. H.; Towe, E.; Tuttle, G.
In this paper, we review our research efforts on RCE high-speed high-efficiency p-i-n and Schottky photodiodes. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs based RCE photodiodes. For RCE Schottky photodiodes, we have achieved a peak quantum efficiency of 50% along with a 3-dB bandwidth of 100 GHz. The tunability of the detectors via a recess etch is also demonstrated. For p-i-n type photodiodes, we have fabricated and tested widely tunable devices with near 100% quantum efficiencies, along with a 3-dB bandwidth of 50 GHz. Both of these results correspond to the fastest RCE photodetectors published in scientific literature.
Open Access
A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach
(Cambridge University Press, 2017) Ghobadi, Amir; Khan, Talha Masood; Celik, Ozan Onur; Biyikli, Necmi; Okyay, Ali Kemal; Topalli, Kagan
In this paper, we present the electromagnetic modeling of a performance-enhanced planar Schottky diode for applications in terahertz (THz) frequencies. We provide a systematic simulation approach for analyzing our Schottky diode based on finite element method and lumped equivalent circuit parameter extraction. Afterward, we use the developed model to investigate the effect of design parameters of the Schottky diode on parasitic capacitive and resistive elements. Based on this model, device design has been improved by deep-trench formation in the substrate and using a closed-loop junction to reduce the amount of parasitic capacitance and spreading resistance, respectively. The results indicate that cut-off frequency can be improved from 4.1 to 14.1 THz. Finally, a scaled version of the diode is designed, fabricated, and well characterized to verify the validity of this modeling approach.
Open Access
Silicon carbide high voltage devices
(2011) Kazar, Özgür
Open Access
Ultrafast and highly efficient resonant cavity enhanced photodiodes
(SPIE, 2003-09) Özbay, Ekmel; Kimukin, İbrahim; Bıyıklı, Necmi
In this talk, we will review our research efforts on resonant cavity enhanced (RCE) high-speed high-efficiency photodiodes (PDs) operating in the 1st and 3rd optical communication windows. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs and InGaAs based RCE photodiodes. For RCE GaAs Schottky type photodiodes, we have achieved peak quantum efficiencies of 50% and 75% with semi-transparent (Au) and transparent (indium-tin-oxide) Schottky layers respectively. Along with 3-dB bandwidths of 50 and 60 GHz, these devices exhibit bandwidth-efficiency (BWE) products of 25 GHz and 45 GHz respectively. By using a postprocess recess etch, we tuned the resonance wavelength of an RCE InGaAs PD from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6 mW optical power, where we obtained 5 mA photocurrent at 3 V reverse bias. The photodetector had a temporal response of 16 psec at 7 V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz.