Browsing by Subject "Schottky barrier internal photoemission photodetector"
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Item Open Access 1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector(IEEE, Piscataway, NJ, United States, 2000) Necmi, B.; Kimukin, I.; Özbay, Ekmel; Tuttle, G.GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.