Browsing by Subject "Schottky Photodiode"

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    AlxGa1-xN based solar blind Schottky photodiodes
    (2004) Tut, Turgut
    Photodetectors are essential components of optoelectronic integrated circuits and fiber optic communication systems. AlxGa1−xN is a promising material for optoelectronics and electronics. Applications include blue and green LEDs, blue laser diodes, high power-high frequency electronics, and UV photodetectors. Photodetectors that operate only in the λ < 280 nm spectrum are called solarblind detectors due to their blindness to solar radiation within the atmosphere. In this thesis, we present our efforts for the design, fabrication and characterization of Al0.38Ga62N/GaN based solar blind Schottky photodiodes. We obtained very low dark current, high quantum efficiency, high detectivity performance. Under 25 V reverse bias, we measured a maximum quantum efficiency of 71 percent at 254 nm and a maximum responsivity of 0.15 A/W at 253 nm for a 150 micron diameter device. To our knowledge, these are the best values reported in the literature. For a 30 micron device, 50 ps FWHM pulse response is observed. When the scope response is deconvoluted, a maximum 3-dB bandwidth of 4.0 GHz is obtained for 30 micron diameter Schottky photodiodes.
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    Fabrication and characterization of high-speed, high quantum efficiency, resonant cavity enhanced Schottky photodiodes
    (1998) Ata, Erhan Polatkan
    Rapidly developing “photonics” technology promises higher bcindwidths of communiccition than any other techniciue did ever. The increasing rate of communication not only alters science and technology, but brings a global cultural exchange, which seems to be one of the most important revolutions in the history. Photodetectors, as vital corniDonents of optoelectronics, cire still being developed to achieve satisfying performances for the increasing communication demcinds. We have designed and fabricated high-speed, high efficiency resonant Ccivity enhanced (RCE) Schottky photodiodes, suitable for 800-850 mil operation wavelengths. We have used two different GaAs/AlGaAs based epitaxial structures to achieve high performance. From one of these structures, we fabricated photodiodes with 50% quantum efficiency and 80 GHz 3-dB bandwidth. The other structure had a design suitable for préfabrication wavelength tuning and adjustable active layer thickness. On this structure, we achieved 20% quantum efficiency along with, world record for RGB photodiodes, over 110 (Hlz 3-dB estimated bandwidth. We investigated effects of active layer, top Au layer, and silicon nitride coating layer thicknesses on the RCE devices. Discrepancy between theory and experiments were also explained briefly. Methods for improving performances of photodiodes has been proposed ¿is possible future work. Possible appliccitions, which may make use of current knowhow on the subject, have also been mentioned.
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    ItemOpen Access
    High-performance AlxGA1-xN-Based UV photodetectors for visible/solar-blind applications
    (2004) Bıyıklı, Necmi
    High-performance detection of ultraviolet (UV) radiation is of great importance for a wide range of applications including flame sensing, environmental (ozone layer) monitoring, detection of biological/chemical agents, missile early warning systems, and secure intersatellite communication systems. These applications require high-performance UV photodetectors with low dark current, high responsivity, high detectivity, and fast time response. The widebandgap AlxGa1−xN ternary alloy is well-suited as a photodetector material for operation in the wavelength range of 200 nm to 365 nm. Its outstanding material properties (direct bandgap, tunable cut-off, allows heterostructures, intrinsically solar-blind) make AlxGa1−xN suitable for a variety of harsh environments. If properly constructed, AlxGa1−xN-based photodetectors could offer significant advantages over the older photomultiplier tube (PMT) technology in terms of size, cost, robustness, complexity, dark current, bandwidth, and solar-blind operation. The motivation behind this work is the need for high-performance, solid-state UV photodetectors that can be cost-effectively manufactured into high-density arrays. We have designed, fabricated, and characterized several visible/solar-blind AlxGa1−xN photodiode samples. With solar-blind AlxGa1−xN photodiode samples, we achieved excellent device performance in almost all aspects. Very low dark currents were measured with heterostructure AlxGa1−xN Schottky and p-i-n samples. The extremely low leakage characteristics resulted in record detectivity and noise performance. Detectivity performance comparable to PMT detectivity was achieved. True solar-blind operation (sub-280 nm cut-off) with high visible rejection was demonstrated. In addition, we improved the bandwidth performance of AlxGa1−xN-based solar-blind photodetectors by over an order of magnitude. Solar-blind Schottky, p-i-n, and metal-semiconductor-metal photodiode samples exhibited very fast pulse response with multi-GHz bandwidths.