Browsing by Subject "Resonant-cavity-detector structures"

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    High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p-i-n photodiodes
    (American Institute of Physics, 2004) Butun, B.; Bıyıklı, Necmi; Kimukin, I.; Aytur, O.; Özbay, Ekmel; Postigo, P. A.; Silveira, J. P.; Alija, A. R.
    The 1.55 μm high-speed operation of GaAs-based p-i-n photodiodes was demonstrated and their design, growth and fabrication were discussed. A resonant-cavity-detector structure was used to selectively enhance the photoresponse at 1.55 μm. The bottom mirror of the resonant cavity was formed by a highly reflecting 15-pair GaAs/AlAs Bragg mirror and molecular-beam epitaxy was used for wafer growth. It was found that the fabricated devices exhibited a resonance of around 1548 nm and an enhancement factor of 7.5 was achieved when compared to the efficiency of a single-pass detector.