Browsing by Subject "Resists"

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    Fabrication of 100 nm pMOSFETS With Hybrid AFW / STM lithography
    (IEEE, 1997-06) Soh, H. T.; Wilder, K.; Atalar, Abdullah; Quate, C. F.
    Scanning probe lithography (SPL) is an emerging area of research in which the scanning tunneling microscope (STM) or atomic force microscope (AFM) is used to pattern nanometer-scale features. Four factors will dictate the viability of SPL as a patterning technology for the semiconductor industry: 1) resolution, 2) alignment accuracy, 3) reliability, and 4) throughput. We present a new SPL technique-a hybrid between the AFM and STMto address these issues. We demonstrate its capabilities and its compatibility with semiconductor processing by fabricating a pMOSFET with an effective channel length (L,ff) of 100 nm and report the device characteristics.
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    ItemOpen Access
    Gate bias characterization of CNT-TFT DNA sensors
    (IEEE, 2009-12) Aktaş, Özgür; Töral, Taylan
    This paper follows the approach in the works of Gui et al. (2007), that use the change in the current of carbon nanotube thin film transistors (CNT-TFT) with DNA attachment and DNA hybridization. The authors have studied the response of CNT-TFTs to DNA binding and hybridization. It was demonstrated for the first time that an increase in sensitivity is observed around the threshold voltage when sweeping the gate bias from negative to positive values. The results presented in this work suggest an improved approach to measuring the response of CNT-TFTs to DNA hybridization.