Gate bias characterization of CNT-TFT DNA sensors

Date
2009-12
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Source Title
International Semiconductor Device Research Symposium, ISDRS '09
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Electronic ISSN
Publisher
IEEE
Volume
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Pages
1 - 2
Language
English
Type
Conference Paper
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Abstract

This paper follows the approach in the works of Gui et al. (2007), that use the change in the current of carbon nanotube thin film transistors (CNT-TFT) with DNA attachment and DNA hybridization. The authors have studied the response of CNT-TFTs to DNA binding and hybridization. It was demonstrated for the first time that an increase in sensitivity is observed around the threshold voltage when sweeping the gate bias from negative to positive values. The results presented in this work suggest an improved approach to measuring the response of CNT-TFTs to DNA hybridization.

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Keywords
DNA, Sensor phenomena and characterization, Probes, Educational institutions, Geometry, Thin film transistors, Passivation, Resists, Tungsten, Testing
Citation
Published Version (Please cite this version)