Browsing by Subject "Phonon assisted tunneling"

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    Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission
    (2014) El-Atab, N.; Ozcan, A.; Alkis, S.; Okyay, Ali Kemal; Nayfeh, A.
    A low power zinc-oxide (ZnO) charge trapping memory with embedded silicon (Si) nanoparticles is demonstrated. The charge trapping layer is formed by spin coating 2 nm silicon nanoparticles between Atomic Layer Deposited ZnO steps. The threshold voltage shift (ΔVt) vs. programming voltage is studied with and without the silicon nanoparticles. Applying -1 V for 5 s at the gate of the memory with nanoparticles results in a ΔVt of 3.4 V, and the memory window can be up to 8 V with an excellent retention characteristic (>10 yr). Without nanoparticles, at -1 V programming voltage, the ΔVt is negligible. In order to get ΔVt of 3.4 V without nanoparticles, programming voltage in excess of 10 V is required. The negative voltage on the gate programs the memory indicating that holes are being trapped in the charge trapping layer. In addition, at 1 V the electric field across the 3.6 nm tunnel oxide is calculated to be 0.36 MV/cm, which is too small for significant tunneling. Moreover, the ΔVt vs. electric field across the tunnel oxide shows square root dependence at low fields (E 1 MV/cm) and a square dependence at higher fields (E > 2.7 MV/cm). This indicates that Poole-Frenkel Effect is the main mechanism for holes emission at low fields and Phonon Assisted Tunneling at higher fields. © 2014 AIP Publishing LLC.
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    Silicon nanoparticle charge trapping memory cell
    (Wiley-VCH Verlag, 2014) El-Atab, N.; Ozcan, A.; Alkis, S.; Okyay, Ali Kemal; Nayfeh, A.
    A charge trapping memory with 2 nm silicon nanoparticles (Si NPs) is demonstrated. A zinc oxide (ZnO) active layer is deposited by atomic layer deposition (ALD), preceded by Al2O3 which acts as the gate, blocking and tunneling oxide. Spin coating technique is used to deposit Si NPs across the sample between Al2O3 steps. The Si nanoparticle memory exhibits a threshold voltage (Vt) shift of 2.9 V at a negative programming voltage of -10 V indicating that holes are emitted from channel to charge trapping layer. The negligible measured Vt shift without the nanoparticles and the good re- tention of charges (>10 years) with Si NPs confirm that the Si NPs act as deep energy states within the bandgap of the Al2O3 layer. In order to determine the mechanism for hole emission, we study the effect of the electric field across the tunnel oxide on the magnitude and trend of the Vt shift. The Vt shift is only achieved at electric fields above 1 MV/cm. This high field indicates that tunneling is the main mechanism. More specifically, phonon-assisted tunneling (PAT) dominates at electric fields between 1.2 MV/cm < E < 2.1 MV/cm, while Fowler-Nordheim tunneling leads at higher fields (E > 2.1 MV/cm). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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    Superconducting systems of low dimensionality
    (1992) Gedik, M. Zafer
    It is possible to call the last five years as the golden age of superconductivity. The two most important developments in the field are the discovery of copper oxide and fullerene superconductors. In this work, some possible pairing mechanisms for these materials ai’e examined by giving emphasis on the reduced dimensionality. First, an older problem, spatially separated electron-hole system, is investigated to identify the possible phases in coupled double quantum well structures in electric field. Secondly, the superconducting transition temperature and response to external magnetic fields of layered systems with varying number of layers are studied by means of a microscopic model and its GinzburgLandau version. It is also shown that an interlayer pairing mechanism, phonon assisted tunneling, can induce superconductivity. Finally, effects of the spherical structure of fullerenes are examined by solving a two fermion problem on an isolated molecule where the particles interact via a short range attractive potential. As a possible mechanism of superconductivity in alkali metal doped fullerenes, coupling between electrons and the radial vibrations of the molecule is investigated.