Browsing by Subject "Phase change memory"
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Item Open Access Extracting the temperature distribution on a phase-change memory cell during crystallization(American Institute of Physics Inc., 2016-10) Bakan, G.; Gerislioglu, B.; Dirisaglik, F.; Jurado, Z.; Sullivan, L.; Dana, A.; Lam, C.; Gokirmak A.; Silva, H.Phase-change memory (PCM) devices are enabled by amorphization- and crystallization-induced changes in the devices' electrical resistances. Amorphization is achieved by melting and quenching the active volume using short duration electrical pulses (∼ns). The crystallization (set) pulse duration, however, is much longer and depends on the cell temperature reached during the pulse. Hence, the temperature-dependent crystallization process of the phase-change materials at the device level has to be well characterized to achieve fast PCM operations. A main challenge is determining the cell temperature during crystallization. Here, we report extraction of the temperature distribution on a lateral PCM cell during a set pulse using measured voltage-current characteristics and thermal modelling. The effect of the thermal properties of materials on the extracted cell temperature is also studied, and a better cell design is proposed for more accurate temperature extraction. The demonstrated study provides promising results for characterization of the temperature-dependent crystallization process within a cell.Item Open Access Macroscopic photoconductive nanowire arrays(IEEE, 2011) Bayındır, Mehmet; Yaman, Mecit; Özgür, Erol; Aktaş, Ozan; Khudiyev, Tural; Kanık, Mehmet; Deniz, HakanA novel high-throughput fabrication technique to produce polymer embedded functional chalcogenide nanowire arrays is demonstrated. Indefinitely-long selenium nanowire arrays are obtained and their size dependent photoconductivity is investigated. Logarithmic increase in photo-conductance is observed. © 2011 IEEE.Item Open Access Suppression of thermoelectric Thomson effect in silicon microwires under large electrical bias and implications for phase-change memory devices(American Institute of Physics Inc., 2014) Bakan G.; Gokirmak, A.; Silva H.We have observed how thermoelectric effects that result in asymmetric melting of silicon wires are suppressed for increasing electric current density (J). The experimental results are investigated using numerical modeling of the self-heating process, which elucidates the relative contributions of the asymmetric thermoelectric Thomson heat (∼J) and symmetric Joule heating (∼J2) that lead to symmetric heating for higher current levels. These results are applied in modeling of the self-heating process in phase-change memory devices. While, phase-change memory devices show a clearly preferred operation polarity due to thermoelectric effects, nearly symmetric operation can be achieved with higher amplitude and shorter current pulses, which can lead to design of improved polarity-invariant memory circuitry. © 2014 AIP Publishing LLC.