Browsing by Subject "Peak responsivity"

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    Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes
    (IEEE, 2012) Tansel, T.; Kutluer, K.; Salihoglu, Ö.; Aydınlı, Atilla; Aslan, B.; Arikan, B.; Kilinc, M. C.; Ergun, Y.; Serincan, U.; Turan, R.
    The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation layers applied to the surface of the device. The MWIR InAs/GaSb SL design structure is based on p-i-n configuration grown by the molecular beam epitaxy on a (001) n-GaSb substrate. The SiO 2-passivated SL photodiodes demonstrated a Schottky-limited noise up to a bias voltage of -0.1 V where the measured peak responsivity is 1.37 A/W with a cut-off wavelength of 4.9 μm and the specific detectivity as high as 1.23 × 10 12 cm. Hz 1/2 W , demonstrating the high quality of the fabricated MWIR SL photodiodes. The noise measurements exhibited a frequency-dependent plateau (i.e., 1/f noise) for unpassivated and Si 3N 4-passivated samples, whereas 1/f-type noise suppression (i.e., frequency-independent plateau) with a noise current reduction at about 30 Hz of more than one order of magnitude was observed for the SiO 2-passivated ones.
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    High-speed solar-blind AlGaN-based metal-semiconductor-metal photodetectors
    (Wiley, 2003) Bıyıklı, Necmi; Kimukin, İbrahim; Kartaloğlu, Tolga; Aytür, Orhan; Özbay, Ekmel
    Solar-blind AlGaN metal-semiconductor-metal (MSM) photodetectors with fast pulse response have been demonstrated. The devices were fabricated on MOCVD-grown epitaxial Al0.38Ga0.62N layers, using a microwave compatible fabrication process. The photodiode samples exhibited low leakage with dark current densities below 1 × 10-6 A/cm 2 at 40 V reverse bias. Photoconductive gain-assisted photoresponse was observed with a peak responsivity of 1.26 A/W at 264 nm. A visible rejection of ∼3 orders of magnitude at 350 nm was demonstrated. Temporal high-speed measurements at 267 nm resulted in fast pulse responses with 3-dB bandwidths as high as 5.4 GHz. This corresponds to a record high-speed performance for solar-blind detectors. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA.