Browsing by Subject "Pauli exclusion principle"

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Open Access
Gunn oscillations in GaN channels
(IOP, 2004) Sevik, Cem; Bulutay, Ceyhun
Gallium nitride with its high negative differential mobility threshold is an appealing material for high power millimetre-wave oscillators as a Gunn diode. By means of extensive ensemble Monte Carlo simulations, the dynamics of large-amplitude Gunn domain oscillations from 120 GHz to 650 GHz is studied in detail. Their operations are checked under both impressed single-tone sinusoidal bias and external tank circuit conditions. The width of the doping notch is observed to enhance higher harmonic efficiency at the expense of the fundamental frequency up to a critical value, beyond which sustained Gunn oscillations cease. The degeneracy effects due to the Pauli exclusion principle are also considered, but their effects are seen to be negligible within the realistic bounds of the Gunn diode operation.
Open Access
Monte Carlo simulation of electron transport in degenerate and inhomogeneous semiconductors
(A I P Publishing LLC, 2007) Zebarjadi, M.; Bulutay, C.; Esfarjani, K.; Shakouri, A.
An algorithm is proposed to include Pauli exclusion principle in Monte Carlo simulations. This algorithm has significant advantages to implement in terms of simplicity, speed, and memory storage; therefore it is ideal for the three-dimensional device simulators. The authors show that even in moderately high applied fields, one can obtain the correct electronic distribution. They give the correct definition for electronic temperature and show that in high applied fields, the quasi-Fermi level and electronic temperature become valley dependent. The effect of including Pauli exclusion principle on the band profile, electronic temperature, and quasi-Fermi level for the inhomogeneous case of a single barrier heterostructure is illustrated.