Browsing by Subject "P-type"

Now showing 1 - 3 of 3

Open Access
Communication: Enhancement of dopant dependent x-ray photoelectron spectroscopy peak shifts of Si by surface photovoltage
(2011) Sezen, H.; Süzer, Şefik
Binding energies measured by x-ray photoelectron spectroscopy (XPS) are influenced by doping, since electrons are transferred to (p-type) and from (n-type) samples when they are introduced into the spectrometer, or brought into contact with each other (p-n junction). We show that the barely measurable Si2p binding energy difference between moderately doped n- and p-Si samples can be enhanced by photoillumination, due to reduction in surface band-bending, which otherwise screens this difference. Similar effects are also measured for samples containing oxide layers, since the band-bending at the buried oxide-Si interfaces is manifest as photovoltage shifts, although XPS does not probe the interface directly. The corresponding shift for the oxide layer of the p-Si is almost twice that of without the oxide, whereas no measurable shifts are observable for the oxide of the n-Si. These results are all related to band-bending effects and are vital in design and performance of photovoltaics and other related systems.
Open Access
Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier
(Optical Society of America, 2013) Ji Y.; Zhang, Z. -H.; Tan S.T.; Ju, Z. G.; Kyaw, Z.; Hasanov N.; Liu W.; Sun X. W.; Demir, Hilmi Volkan
We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes penetrate deeper within the active region even under low injection, increasing the radiative recombination. Moreover, the improved hole transport leads to reduced forward voltage and enhanced light generation. This is also verified by numerical analysis of hole distribution and energy band structure. © 2013 Optical Society of America.
Open Access
Optical properties of the two-dimensional magnetoexcitons under the influence of the Rashba spin-orbit coupling
(SPIE, 2011) Hakioglu, Tuğrul; Liberman, M.A.; Moskalenko, S.A.; Podlesny I.V.
The influence of the Rashba spin-orbit coupling on the two-dimensional (2D) electrons and holes in a strong perpendicular magnetic field leads to different results of the Landau quantization in different spin projections. In Landau gauge the unidimensional wave vector describing the free motion in one in-plane direction is the same for both spin projections, whereas the numbers of the Landau quantization levels are different. For electron in s-type conduction band they differ by one, as was established earlier by Rashba1, whereas for heavy holes in p-type valence band influenced by the 2D symmetry of the layer they differ by three. There are two lowest spin-splitted Landau levels for electrons as well as two lowest for holes. They give rise to four lowest energy levels of the 2D magnetoexcitons. It is shown that two of them are dipole-active in band-to-band quantum transitions, one is quadrupole-active and the fourth is forbidden. The optical orientation under the influence of the circularly polarized light leads to optical alignment of the magnetoexcitons with different orbital momentum projections on the direction of the external magnetic field. © 2011 SPIE.