Browsing by Subject "Oxygen contamination"

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    ItemOpen Access
    Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
    (IEEE, 2016) Deminskyi, Petro; Haider, Ali; Bıyıklı, Necmi; Ovsianitsky, A.; Tsymbalenko, A.; Kotov, D.; Matkivskyi, V.; Liakhova, N.; Osinsky, V.
    The paper consider oxygen contamination of HCPA ALD grown GaN films under an air conditioning and during different time duration. High resolution XPS analysis of HCPA ALD grown GaN films after diluted 1:10 HF(41 %) : H2O and undiluted HF (41 %) influence on oxygen impurities was investigated. Lesser oxygen impurities have been observed. Better resistivity to oxygen atoms of GaN thin films after diluted HF solution treatment was achieved compared to undiluted HF treatment and without treatment.
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    ItemOpen Access
    Plasma-enhanced atomic layer deposition of III-nitride thin films
    (Electrochemical Society Inc., 2013) Ozgit-Akgun, Çağla; Dönmez İnci; Bıyıklı, Necmi
    AlN and GaN thin films were deposited by plasma-enhanced atomic layer deposition using trimethylmetal precursors. The films were found to have high oxygen incorporation, which was attributed to oxygen contamination related to the plasma system. The choice of nitrogen containing plasma gas (N2, N2/H2 or NH3) determined the severity of oxygen incorporation into deposited films. Lowest oxygen concentrations were attained for AlN and GaN thin films using NH3 and N2 plasma, respectively. Initial experiments have shown that GaN thin films with low impurity concentrations can be deposited when plasma-related oxygen contamination is avoided by the use of an alternative plasma source. © The Electrochemical Society.