Browsing by Subject "Noise characterization"

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    Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes
    (IEEE, 2012) Tansel, T.; Kutluer, K.; Salihoglu, Ö.; Aydınlı, Atilla; Aslan, B.; Arikan, B.; Kilinc, M. C.; Ergun, Y.; Serincan, U.; Turan, R.
    The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation layers applied to the surface of the device. The MWIR InAs/GaSb SL design structure is based on p-i-n configuration grown by the molecular beam epitaxy on a (001) n-GaSb substrate. The SiO 2-passivated SL photodiodes demonstrated a Schottky-limited noise up to a bias voltage of -0.1 V where the measured peak responsivity is 1.37 A/W with a cut-off wavelength of 4.9 μm and the specific detectivity as high as 1.23 × 10 12 cm. Hz 1/2 W , demonstrating the high quality of the fabricated MWIR SL photodiodes. The noise measurements exhibited a frequency-dependent plateau (i.e., 1/f noise) for unpassivated and Si 3N 4-passivated samples, whereas 1/f-type noise suppression (i.e., frequency-independent plateau) with a noise current reduction at about 30 Hz of more than one order of magnitude was observed for the SiO 2-passivated ones.
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    Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared
    (SPIE, 2013) Tansel, T.; Kutluer, K.; Muti, Abdullah; Salihoğlu, Ömer; Aydınlı, Atilla; Turan, R.
    We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise measurements exhibited a frequency dependent plateau (i.e. 1/f-noise characteristic) for unpassivated as well as Si3N4 passivated samples whereas 1/f-type low noise suppression (i.e. frequency independent plateau) with a noise current reduction of more than one order of magnitude was observed for SiO2 passivation. For reverse bias values below -0.15V, the classical Schottky-noise calculation alone did not appear to describe the noise mechanism in a SL noise behavior, which shows a divergence between theoretically and experimentally determined noise values. We identify that, the additional noise appears, with and without passivation, at the surface activation energy of < 60 meV and is inversely proportional to the reverse bias. This is believed to be caused by the surface dangling-bonds (as well as surface states) whose response is controlled by the applied reverse bias. The calculated noise characteristics showed a good agreement with the experimental data. © 2013 SPIE.