Browsing by Subject "Monolithic microwave integrated circuit (MMIC)"

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    60W stacked-HEMT based asymmetric X-band GaN SPDT switch for single chip T/R modules
    (IEEE - Institute of Electrical and Electronics Engineers, 2023-10-25) Ertürk, Volkan; Gürdal, Armağan; Çankaya Akoğlu, Büşra; Özbay, Ekmel
    This paper presents a high-power, asymmetric single-pole double-throw (SPDT) monolithic microwave integrated circuit (MMIC) switch using high electron mobility transistors (HEMT) with AlGaN/GaN technology for single chip X-band T/R modules. The SPDT switch is designed in series-shunt topology for high-power handling and low-loss performance. For high-power handling, shunt-stacked HEMTs on the transmit (Tx) path and series-stacked HEMTs on the receive (Rx) path are used. In its Tx mode, the switch has achieved an insertion loss better than 0.75 dB throughout the 6-13 GHz bandwidth with a return loss of 14 dB and an isolation of 28 dB. It can handle more than 60 W RF input power at 0.1 dB compression. In its Rx mode, the switch can receive signals with an insertion loss lower than 1.15 dB with 14 dB return loss and 19 dB isolation. With its low insertion and high-power handling capacity from C-band to Ku-band, this switch shows state-of-the-art performance for communication systems.
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    ItemOpen Access
    A high-power and broadband gan spdt mmic switch using gate-optimized hemts
    (Institute of Electrical and Electronics Engineers, 2022-05-22) Erturk, V.; Gurdal, A.; Özbay, Ekmel
    A high-power, broadband monolithic microwave integrated circuit (MMIC) single-pole double-throw (SPDT) switch is designed with gate-optimized high-electron-mobility transistors (HEMTs) using AlGaN/Gallium nitride (GaN) technology. The foot length of the gate is varied from 200 to 250 nm, and the head length is varied from 500 to 750 nm in the T-gate structure to optimize the radio frequency (RF) performance. The SPDT switch is designed in a series-shunt-shunt topology using gate topology as a design parameter. The switch has achieved an insertion loss better than 0.75 dB throughout the 3.5-13.5-GHz bandwidth. It can transmit 30-W output power at 0.1-dB compression point and handle 47.5-dBm input power at P-1dB. The isolation is above 25 dB, and the return loss is better than 11 dB. With its low insertion and high power-handling capacity in broadband, the SPDT switch shows state-of-the-art performance for high-power communication systems and radar applications.
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    ItemOpen Access
    Wideband distributed choke inductor for distributed power amplifiers
    (Institute of Electrical and Electronics Engineers, 2023-01-06) Ballı, Çağdaş; Değirmenci, A.; Aktuğ, A.; Atalar, Abdullah
    A method to design a wideband, low-loss, and highcurrent choke inductor suitable for use in a distributed power amplifier (DPA) is presented. The choke inductor is composed of several paralleled low-current inductors with small parasitics placed in a distributed manner. High-frequency gain-limiting parasitic shunt capacitors of these inductors are absorbed by the series inductors already present between the transistor drain terminals of the distributed amplifier. The measurement results of a 2-18-GHz DPA designed using a distributed choke inductor with an equivalent dc resistance of 0.32 Omega are given.