Browsing by Subject "Modulators"

Now showing 1 - 13 of 13

Open Access
Actively tunable thin films for visible light by thermo-optic modulation of ZnO
(Wiley-VCH Verlag, 2016) Battal, E.; Okyay, Ali Kemal
Applications of active control of light matter interactions within integrated photonics, hyper-spectral imaging, reconfigurable lasers, and selective bio-surfaces have enormously increased the demand for realization of optical modulation covering the spectrum from ultraviolet (UV) up to infrared (IR) wavelength range. In this study, we demonstrate ZnO-based actively tunable perfect absorber operating within UV and visible spectrum with more than 5 nm shift in the resonant absorption wavelength. Using spectroscopic ellipsometry technique, we extract temperature-dependent optical constants of atomic layer-deposited ZnO within 0.3-1.6 and 4-40 μm spectra. We also observe bandgap narrowing of ZnO at elevated temperatures due to lattice relaxation verified by the red-shift of phonon-modes. At around its bandgap, refractive index variations up to 0.2 is obtained and ZnO is shown to exhibit thermo-optic coefficient as high as 9.17 Ã— 10-4 K-1 around the bandgap which is the largest among well-known large bandgap materials. Â© 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Open Access
Blue InGaN/GaN-based quantum electroabsorption modulators
(IEEE, 2006) Sarı, Emre; Nizamoğlu, Sedat.; Özel, Tuncay; Demir, Hilmi Volkan
We introduce InGaN/GaN-based quantum electroabsorption modulator that incorporates ∼5 nm thick In0.35Ga0.65N/GaN quantum structures for operation in the blue spectral range of 420-430 nm. This device exhibits an optical absorption coefficient change of ∼6000 cm-1 below the band edge at highly transmissive, blue region (at λ peak=424 nm) with a 6 V swing and emits blue light (at λpeak=440 nm) with an optical output power of 0.35 mW at a 20 mA current injection level. Unlike infrared III-V quantum modulators, this blue modulator shows a blue shift in its electroabsorption (for λ < 418 nm) with increasing applied field accross it, due to high alternating polarization fields in its quantum structures; this electroabsorption behavior is opposite to the conventional quantum confined Stark effect that features common red shift. This device holds great promise for > 10 GHz optical clock injection directly into silicon CMOS chips in the blue because of its low parasitic in-series resistance (< 100 Ω) and the possibility to make smaller device mesas for low capacitance (1.2 fF for a 10μm×10μm mesa size). Considering high-speed operation and high responsivity of silicon-on-insulator (SOI) photodetectors in the blue range, unlike in the infrared, this approach eliminates the need for on-chip hybrid integration of Si CMOS with III-V photodetectors. Furthermore, the efficient electroluminescence of this device makes it feasible to consider on-chip blue laser-modulator integration for a compact optical clocking scheme. © 2006 IEEE.
Open Access
Broadband terahertz modulators using self-gated graphene capacitors
(Optical Society of America, 2015) Kakenov, N.; Balci, O.; Polat, E. O.; Altan, H.; Kocabas, C.
We demonstrate a terahertz intensity modulator using a graphene supercapacitor which consists of two large-area graphene electrodes and an electrolyte medium. The mutual electrolyte gating between the graphene electrodes provides very efficient electrostatic doping with Fermi energies of 1 eV and a charge density of 8 × 1013 cm-2. We show that the graphene supercapacitor yields more than 50% modulation between 0.1 and 1.4 THz with operation voltages less than 3 V. The low insertion losses, high modulation depth over a broad spectrum, and the simplicity of the device structure are the key attributes of graphene supercapacitors for THz applications.
Open Access
Broadband THz modulators based on multilayer graphene on PVC
(IEEE, 2016) Kaya, E.; Kakenov, Nurbek; Kocabaş, Coşkun; Altan, H.; Esentürk, O.
In this study we present the direct terahertz time-domain spectroscopic measurement of CVD-grown multilayer graphene (MLG) on PVC substrate with an electrically tunable Fermi level. In a configuration consisting MLG and injected organic dopant, the transmitted intensity loss of terahertz radiation was observed with an applied voltage between 0 and 3.5 V. We showed that MLG on PVC devices provided approximately 100 % modulation between 0.2 and 1.5 THz at preferentially low operation voltage of ca. 3V. The observed modulation bandwidth in terahertz frequencies appears to be instrument limited.
Open Access
Compact optical temporal processors
(Optical Society of America, 1995) Mendlovic, D.; Melamed, O.; Özaktaş, Haldun M.
Optical signal processing can be done with time-lens devices. A temporal processor based on chirp-z transformers is suggested. This configuration is more compact than a conventional 4-f temporal processor. On the basis of implementation aspects of such a temporal processor, we did a performance analysis. This analysis leads to the conclusion that an ultrafast optical temporal processor can be implemented.
Open Access
Electrically controlled terahertz spatial light modulators with graphene arrays
(IEEE, 2016) Kakenov, Nurbek; Takan, T.; Özkan, V. A.; Balcı, Osman; Polat, Emre Ozan; Altan, H.; Kocabaş, Coşkun
Gate-tunable high-mobility electrons on atomically thin graphene layers provide a unique opportunity to control electromagnetic waves in a very broad spectrum. In this paper, we describe an electrically-controlled multipixel terahertz light modulators. The spatial light modulator is fabricated using two large-area graphene layers grown by chemical vapor deposition and transferred on THz transparent and flexible substrates. Room temperature ionic liquid, inserted between the graphene, provides mutual gating between the graphene layers. We used passive matrix addressing to control local charge density thus the THz transmittance. With this device configuration, we were able to obtain 5×5 arrays of graphene modulator with 65% modulation between 0.1 to 1.5 THz.
Open Access
Electrically-reconfigurable integrated photonic switches
(IEEE, 2004) Fidaner, O.; Demir, Hilmi Volkan; Sabnis V.A.; Harris Jr. J.S.; Miller, D.A.B.; Zheng J.-F.
We report remotely electrically reconfigurable photonic switches that intimately integrate waveguide electroabsorption modulators with surface-normal photodiodes, avoiding conventional electronics. These switches exhibit full C-band wavelength conversion at 5 Gb/s and are remotely reconfigurable within tens of nanoseconds.
Open Access
Femtosecond pulse generation with voltage-controlled graphene saturable absorber
(Optical Society of America, 2014) Baylam, M. N.; Cizmeciyan, S.; Ozharar, S.; Polat, E. O.; Kocabas, C.; Sennaroglu, A.
We report, for the first time to our knowledge, the demonstration of a graphene supercapacitor as a voltage-controlled saturable absorber for femtosecond pulse generation from a solid-state laser. By applying only a few volts of bias, the Fermi level of the device could be shifted to vary the insertion loss, while maintaining a sufficient level of saturable absorption to initiate mode-locked operation. The graphene supercapacitor was operated at bias voltages of 0.5-1V to generate sub-100 fs pulses at a pulse repetition rate of 4.51 MHz from a multipass-cavity Cr4+:forsterite laser operating at 1255 nm. The nonlinear optical response of the graphene supercapacitor was further investigated by using pump-probe spectroscopy. (C) 2014 Optical Society of America
Open Access
Femtosecond Yb-doped fiber laser system at 1 μm of wavelength with 100-nm bandwidth and variable pulse structure for accelerator diagnostics
(2007-05) Winter, A.; İlday, F. Ömer; Steffen, B.
Laser-based diagnostic systems play an increasingly important role in accelerator diagnostics in, for instance, electron bunch length measurements. To date, the laser system of choice for electro-optic experiments has been the Ti:sapphire laser, providing several nanojoules of pulse energies at fixed a repetition rate, which is not well suited to the bunch structure of accelerator facilities such as FLASH. Limited long-term stability and operability of Ti:sapphire systems are significant drawbacks for a continuously running measurement system requiring minimal maintenance and maximum uptime. We propose fiber lasers as a promising alternative with significant advantages. Gating of the pulse train to match the bunch profile is simple with fibercoupled modulators, in contrast to bulk modulators needed for Ti:sapphire lasers. An in-line fiber amplifier can boost the power, such that a constant pulse energy is maintained regardless of the chosen pulse pattern. Significantly, these lasers offer excellent robustness at a fraction of the cost of a Ti:sapphire laser and occupy a fraction of the optical table space.
Open Access
A hole modulator for InGaN/GaN light-emitting diodes
(American Institute of Physics, 2015) Zhang, Z-H.; Kyaw, Z.; Liu W.; Ji Y.; Wang, L.; Tan S.T.; Sun, X. W.; Demir, Hilmi Volkan
The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332meV to ∼294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.
Open Access
Lyotropic liquid-crystalline mesophase of lithium triflate-nonionic surfactant as gel electrolyte for graphene optical modulator
(American Chemical Society, 2023) Balci, F. M.; Balci, S.; Kocabas, C.; Dag, Ö.
Lithium salt (noncoordinating anions, such as lithium triflate (Ltf)) gel electrolytes may be key for the practical use of electrochemical devices. We introduce a new lyotropic liquid-crystalline (LLC) mesophase using Ltf, a small amount of water (as low as 1.3 water per Ltf), and nonionic surfactant (C18H37(OCH2CH2)10OH, C18E10). The LLC phase forms over a broad range of Ltf/C18E10 mole ratios, 2-18. The clear ethanol solution of the ingredients can be either directly spin-coated over a glass substrate to form a gel phase or it can be prepared as a gel by mixing Ltf, water, and C18E10. The mesophase leaches out surfactant molecules at low salt concentrations, but at a salt/surfactant mole ratio of above 8, the phase is homogeneous with a cubic mesostructure, fully transparent in the visible optical region, mechanically flexible, and an effective gel electrolyte. We have observed a large electrostatic doping on graphene with the Fermi energy level of ∼1.0 eV using Ltf-C18E10 gel electrolytes. The Ltf-based gels demonstrate better properties than commonly used ionic liquid electrolyte in graphene optical modulators. The stability of the new gel electrolytes and their superior performance make them suitable electrolytes for use in graphene-based optical modulators.
Open Access
Multifunctional integrated photonic switches
(Institute of Electrical and Electronics Engineers, 2005) Demir, H. M.; Sabnis, V. A.; Fidaner, O.; Zheng, J.-F.; Harris, J. S.; Miller, D. A. B.
Traditional optical-electronic-optical (o-e-o) conversion in today’s optical networks requires cascading separately packaged electronic and optoelectronic chips and propagating high-speed electrical signals through and between these discrete modules. This increases the packaging and component costs, size, power consumption, and heat dissipation. As a remedy, we introduce a novel, chip-scale photonic switching architecture that operates by confining high-speed electrical signals in a compact optoelectronic chip and provides multiple network functions on such a single chip. This new technology features low optical and electrical power consumption, small installation space, high-speed operation, two-dimensional scalability, and remote electrical configurability. In this paper, we present both theoretical and experimental discussion of our monolithically integrated photonic switches that incorporate quantum-well waveguide modulators directly driven by on-chip surface-illuminated photodetectors. These switches can be conveniently arrayed two-dimensionally on a single chip to realize a number of network functions. Of those, we have experimentally demonstrated arbitrary wavelength conversion across 45 nm and dual-wavelength broadcasting over 20 nm, both spanning the telecommunication center band (1530–1565 nm) at switching speeds up to 2.5 Gb/s. Our theoretical calculations predict the capability of achieving optical switching at rates in excess of 10 Gb/s using milliwatt-level optical and electrical switching powers.
Open Access
Photonic devices and systems embedded with nanocyrstals
(SPIE, 2006) Demir, Hilmi Volkan; Soğancı, Ibrahim Murat; Mutlugun, Evren; Tek, Sümeyra; Huyal, Ilkem Ozge
We review our research work on the development of photonic devices and systems embedded with nanocyrstals for new functionality within EU Phoremost Network of Excellence on nanophotonics. Here we report on CdSe/ZnS nanocrystalbased hybrid optoelectronic devices and systems used for scintillation to enhance optical detection and imaging in the ultraviolet range and for optical modulation via electric field dependent optical absorption and photoluminescence in the visible. In our collaboration with DYO, we also present photocatalytic TiO2 nanoparticles incorporated in solgel matrix that are optically activated in the ultraviolet for the purpose of self-cleaning.