Browsing by Subject "Minority carrier lifetimes"

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    Electrical and chemical characterization of chemically passivated silicon surfaces
    (IEEE, 2008) Chhabra, B.; Süzer, Şefik; Opila, R. L.; Honsberg, C. B.
    The surface composition of chemically passivated silicon substrates is investigated using XPS and FTIR techniques. The samples are passivated with methanol, quinhydrone-methanol and iodine-methanol solution after HF treatment. The minority carrier lifetimes of these chemically passivated silicon substrates are also measured. Quinhydrone-methanol solution provides a chemically inert surface and a considerably longer minority carrier lifetime.
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    ItemOpen Access
    Electrical performance of InAs/AlSb/GaSb superlattice photodetectors
    (Academic Press, 2016) Tansel, T.; Hostut M.; Elagoz, S.; Kilic A.; Ergun, Y.; Aydınlı, Atilla
    Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification of dominant current mechanisms in each operating temperature can be used to extract minority carrier lifetimes which are highly important for understanding carrier transport and improving the detector performance. InAs/AlSb/GaSb based T2SL N-structures with AlSb unipolar barriers are designed for low dark current with high resistance and detectivity. Here we present electrical and optical performance of such N-structure photodetectors.