Browsing by Subject "Mid-wavelength infrared"

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    Electrical performance of InAs/AlSb/GaSb superlattice photodetectors
    (Academic Press, 2016) Tansel, T.; Hostut M.; Elagoz, S.; Kilic A.; Ergun, Y.; Aydınlı, Atilla
    Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification of dominant current mechanisms in each operating temperature can be used to extract minority carrier lifetimes which are highly important for understanding carrier transport and improving the detector performance. InAs/AlSb/GaSb based T2SL N-structures with AlSb unipolar barriers are designed for low dark current with high resistance and detectivity. Here we present electrical and optical performance of such N-structure photodetectors.
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    Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range
    (2013) Kaya, U.; Hostut, M.; Kilic, A.; Sakiroglu, S.; Sokmen I.; Ergun, Y.; Aydınlı, Atilla
    In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n detector. Kronig-Penney and envelope function approximation is used to calculate band gap energy and superlattice minibands. Variational method is also used to calculate exciton binding energies. Our results show that carriers overlap increases at GaSb/InAs interface on the higher energy side while it decreases at InAs/GaSb interface on the lower energy side with increasing reverse bias due to shifting the hole wavefunction toward to the GaSb/InAs interface decisively. Binding energies increase with increasing electric field due to overall overlap of electron and hole wave functions at the both interfaces in contrast with type I superlattices. This predicts that optical absorption is enhanced with increasing electric field. © 2013 American Institute of Physics.