Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range

Date
2013
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Source Title
Journal of Applied Physics
Print ISSN
218979
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Volume
113
Issue
8
Pages
Language
English
Type
Article
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Abstract

In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n detector. Kronig-Penney and envelope function approximation is used to calculate band gap energy and superlattice minibands. Variational method is also used to calculate exciton binding energies. Our results show that carriers overlap increases at GaSb/InAs interface on the higher energy side while it decreases at InAs/GaSb interface on the lower energy side with increasing reverse bias due to shifting the hole wavefunction toward to the GaSb/InAs interface decisively. Binding energies increase with increasing electric field due to overall overlap of electron and hole wave functions at the both interfaces in contrast with type I superlattices. This predicts that optical absorption is enhanced with increasing electric field. © 2013 American Institute of Physics.

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Keywords
Band gap energy, Envelope function approximations, Exciton-binding energy, Hole wave functions, InAs/GaSb superlattices, Mid-wavelength infrared, Theoretical investigations, Variational methods, Binding energy, Electric fields, Indium antimonides, Superlattices
Citation
Published Version (Please cite this version)