Browsing by Subject "Metal-semiconductor-metal uv photodetectors"

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    Metal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interface
    (Pergamon Press, 2015) Kumar, M.; Noh, Y.; Polat, K.; Okyay, Ali Kemal; Lee, D.
    Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-to-dark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer.