Browsing by Subject "Metal semiconductor interface"

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    Plasmonic gratings for enhanced near infrared sensitivity of Silicon based Schottky photodetectors
    (IEEE, 2011) Polat, Kazım Gürkan; Aygun, Levent Erdal; Okyay, Ali Kemal
    Schottky photodetectors have been intensively investigated due to their high speeds, low device capacitances, and sensitivity in telecommunication standard bands, in the 0.8μm to 1.5μm wavelength range. Due to extreme cost advantage of Silicon over compound semiconductors, and seamless integration with VLSI circuits, metal-Silicon Schottky photodetectors are attractive low cost alternatives to InGaAs technology. However, efficiencies of Schottky type photodetectors are limited due to thin absorption region. Previous efforts such as resonant cavities increase the sensitivity using optical techniques, however their integration with VLSI circuits is difficult. Therefore, there is a need for increasing Schottky detector sensitivity, in a VLSI compatible fashion. To address this problem, we design plasmonic grating structures to increase light absorption at the metal-Silicon Schottky interface. There are earlier reports of plasmonic structures to increase Schottky photodetector sensitivity, with a renowned interest in the utilization of plasmonic effects to improve the absorption characteristics of metal-semiconductor interfaces. In this work, we report the design, fabrication and characterization of Gold-Silicon Schottky photodetectors with enhanced absorption in the near infrared region. © 2011 IEEE.
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    Plasmonic nanoslit array enhanced metal-semiconductor-metal optical detectors
    (Institute of Electrical and Electronics Engineers, 2012-01-09) Eryilmaz, S. B.; Tidin, O.; Okyay, Ali Kemal
    Metallic nanoslit arrays integrated on germanium metal-semiconductor-metal photodetectors show many folds of absorption enhancement for transverse-magnetic polarization in the telecommunication C-band. Such high enhancement is attributed to resonant interference of surface plasmon modes at the metal-semiconductor interface. Horizontal surface plasmon modes were reported earlier to inhibit photodetector performance. We computationally show, however, that horizontal modes enhance the efficiency of surface devices despite reducing transmitted light in the far field.