Browsing by Subject "MOS capacitors"

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    Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
    (A I P Publishing LLC, 2015) Altuntas, H.; Ozgit Akgun, C.; Donmez, I.; Bıyıklı, Necmi
    Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2-21.5 MV/m), Schottky emission (23.6-39.5 MV/m), Frenkel-Poole emission (63.8-211.8 MV/m), trap-assisted tunneling (226-280 MV/m), and Fowler-Nordheim tunneling (290-447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements.
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    ItemOpen Access
    Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing
    (2008-10) Yu, H.-Y.; Park, J.-H.; Okyay, Ali Kemal; Saraswat, K. C.
    We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). Very high quality Ge layers can be selectively integrated on Si CMOS platform with this technique. We confirm the reduction of dislocation density in Ge layers using AFM surface morphology study. In addition, in situ doping of Ge layers is achieved and MOS capacitor structures are studied. ©The Electrochemical Society.