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Browsing by Subject "Low temperature properties"

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    Low-temperature Raman scattering spectra of GaSexS1-x layered mixed crystals
    (WILEY-VCH Verlag GmbH & Co. KGaA, 2002) Gasanly, N. M.; Aydınlı, Atilla
    Raman scattering has been used to study the vibrational spectra of GaSexS1-x layered mixed crystals at 10 K. We report the frequency dependencies of different modes on composition x, with particular emphasis on A′1 (2) (A1g 1) and A′1 (4) (A1g 2) intralayer compressional modes having low dispersion in the Brillouin zone. The appearance of additional bands is attributed to multimode behavior typically exhibited by mixed crystals of anisotropic compounds.
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    Raman scattering from confined phonons in GaAs/AlGaAs quantum wires
    (Academic Press, 1998) Bairamov, B. H.; Aydınlı, Atilla; Tanatar, Bilal; Güven, K.; Gurevich, S.; Mel'tser, B. Ya.; Ivanov, S. V.; Kop'ev, P. S.; Smirnitskii, V. B.; Timofeev, F. N.
    We report on photoluminescence and Raman scattering performed at low temperature (T = 10 K) on GaAs/Al 0.3Ga 0.7As quantum-well wires with effective wire widths of L = 100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic thinning. We find evidence for the existence of longitudinal optical phonon modes confined to the GaAs quantum wire. The observed frequency at ω L10 = 285.6 cm -1 for L = 11.0 nm is in good agreement with that calculated on the basis of the dispersive dielectric continuum theory of Enderlein† as applied to the GaAs/Al 0.3Ga 0.7As system. Our results indicate the high crystalline quality of the quantum-well wires fabricated using these techniques. © 1998 Academic Press.

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