Browsing by Subject "Low noise"
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Item Open Access All-normal-dispersion fiber lasers for frequency metrology(Optical Society of America, 2011) Şenel, Çağrı; İlday, F. Ömer; Kara, O.; Birlikseven, C.; Erdoǧan, C.; Hamid, R.Development of an all-normal-dispersion Yb-doped fiber laser-based frequency comb is reported. Repetition-frequency stabilization to the cesium standard, amplitude and phase noise measurements indicate low-noise performance. ©2011 Optical Society of America.Item Open Access Development and characterization of all-normal dispersion fiber laser for frequency comb generation(Optical Society of America, 2011) Şenel, Çağrı; İlday, F. Ömer; Kara O.; Hamid, R.; Erdoğan, C.Development of an all-normal-dispersion Yb-doped fiber laser-based frequency comb is reported. Repetition-frequency stabilization to the cesium standard, amplitude and phase noise measurements indicate low-noise performance. © 2011 Optical Society of America.Item Open Access Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity(American Institute of Physics, 2002) Bıyıklı, Necmi; Aytur, O.; Kimukin, I.; Tut, T.; Özbay, EkmelWe report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n-/n+ AlGaN/GaN heterostructures using a microwave compatible fabrication process. True solar-blind operation with a cutoff wavelength of ∼274nm was achieved with AlxGa1-xN (x=0.38) absorption layer. The solar-blind detectors exhibited <1.8nA/cm2 dark current density in the 0-25 V reverse bias regime, and a maximum quantum efficiency of 42% around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10-29A2/Hz at 10 kHz. © 2002 American Institute of Physics.Item Open Access Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier(IEEE, 2004-10) Schwindt, R. S.; Kumar, V.; Aktaş, Ozan; Lee, J.-W.; Adesida, I.The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at 43°C to 5.0 dB at 150°C. © 2004 IEEE.