Browsing by Subject "Light-emitting-diodes"
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Item Open Access Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures(Optical Society of America, 2013-01-14) Sari, E.; Jang, L. W.; Baek, J. H.; Lee, I. H.; Sun, X. W.; Demir, Hilmi VolkanWe study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved photoluminescence measurements. The results reveal that ELOG structures with decreasing mask stripe widths exhibit stronger EA performance, with a maximum EA enhancement factor of 4.8 compared to the reference without ELOG. The analyses show that the EA performance follows similar trends with decreasing dislocation density as the essential parameters of the photoluminescence spectra (peak position, width and intensity) together with the photoluminescence lifetimes. While keeping the growth window widths constant, compared to photoluminescence behavior, however, EA surprisingly exhibits the largest performance variation, making EA the most sensitive to the mask stripe widths. (C) 2013 Optical Society of AmericaItem Open Access Efficient nonradiative energy transfer from InGaN/GaN nanopillars to CdSe/ZnS core/shell nanocrystals(AIP Publishing, 2011-04-20) Nizamoglu, S.; Guzelturk, B.; Jeon, D. W.; Lee, I. H.; Demir, Hilmi VolkanIn this study, we propose and demonstrate efficient electron-hole pair injection from InGaN/GaN multiple quantum well nanopillars (MQW-NPs) to CdSe/ZnS core/shell nanocrystal quantum dots (NQDs) via Forster-type nonradiative energy transfer. For that we hybridize blue-emitting MQW-NPs with red-emitting NQDs and the resultant exciton transfer reaches a maximum rate of (0.192 ns)(-1) and a maximum efficiency of 83.0%. By varying the effective bandgap of core/shell NQDs, we conveniently control and tune the excitonic energy transfer rate for these NQD integrated hybrids, and our measured and computed exciton transfer rates are found to be in good agreement for all hybrid cases.Item Open Access Observation of efficient transfer from Mott-Wannier to Frenkel excitons in a hybrid semiconductor quantum dot-polymer composite at room temperature(American Institute of Physics, 2010-12-29) Nizamoglu, S.; Sun, X. W.; Demir, Hilmi VolkanEfficient conversion from Mott-Wannier to Frenkel excitons is observed at room temperature. The time-resolved photoluminescence shows that the energy transfer rate and efficiency reach 0.262 ns-1 and 80.9%, respectively. The energy transfer is enabled by strong dipole-dipole coupling in a hybrid inorganic/organic system of CdSe/ZnS core/shell heteronanocrystal and poly[2-methoxy-5-(3,7-dimethyl-octyloxy)-1,4-phenylenevinylene] homopolymer composite, and the measured energy transfer efficiencies are consistent with the analytical model.Item Open Access Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs. polar InGaN/GaN based quantum heterostructures(Optical Society of America, 2011) Sari, E.; Nizamoglu, S.; Choi, J H.; Lee, S J.; Baik, K H.; Lee, I. H.; Baek, J. H.; Hwang, S M.; Demir, Hilmi VolkanWe report on the electric field dependent carrier dynamics and optical absorption in nonpolar a-plane GaN-based quantum heterostructures grown on r-plane sapphire, which are surprisingly observed to be opposite to those polar ones of the same materials system and similar structure grown on c-plane. Confirmed by their time-resolved photoluminescence measurements and numerical analyses, we show that carrier lifetimes increase with increasing external electric field in nonpolar InGaN/GaN heterostructure epitaxy, whereas exactly the opposite occurs for the polar epitaxy. Moreover, we observe blue-shifting absorption spectra with increasing external electric field as a result of reversed quantum confined Stark effect in these polar structures, while we observe red-shifting absorption spectra with increasing external electric field because of standard quantum confined Stark effect in the nonpolar structures. We explain these opposite behaviors of external electric field dependence with the changing overlap of electron and hole wavefunctions in the context of Fermi's golden rule. (C) 2011 Optical Society of AmericaItem Open Access Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers(AIP Publishing, 2014) Zhang Z.-H.; Li, W.; Ju, Z.; Tan S.T.; Ji Y.; Kyaw, Z.; Zhang X.; Wang, L.; Sun, X. W.; Demir, Hilmi VolkanInGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show that the QCSE is self-screened by the polarization induced bulk charges enabled by designing quantum barriers. The InN composition of the InGaN quantum barrier graded along the growth orientation opportunely generates the polarization induced bulk charges in the quantum barrier, which well compensate the polarization induced interface charges, thus avoiding the electric field in the quantum wells. Consequently, the optical output power and the external quantum efficiency are substantially improved for the LEDs. The ability to self-screen the QCSE using polarization induced bulk charges opens up new possibilities for device engineering of III-nitrides not only in LEDs but also in other optoelectronic devices.Item Open Access A two dimensional nanopatterned thin metallic transparent conductor with high transparency from the ultraviolet to the infrared(American Institute of Physics, 2012-11-01) Du, Q. G.; Sathiyamoorthy, K.; Zhang, L. P.; Demir, Hilmi Volkan; Kam, C. H.; Sun, X. W.The optical properties of a two-dimensional nanohole patterned aluminum thin film in hexagonal lattice are studied. The transmission dip can be moved out from the visible range by manipulating the lattice constant. The resulting nanopatterned thin film is demonstrated to exhibit a high transparency in a wide wavelength range. The origins of the transmission dip and the transmission drop are explained. For constant resistance, thicker films with a larger filling ratio lead to better transmittance in the visible range. Angular response of the nanopatterned metallic film is also analyzed, and transmittances using several other metals are compared.