Browsing by Subject "Insulation"

Now showing 1 - 3 of 3

Open Access
Intravascular extended sensitivity (IVES) MRI antennas
(John Wiley & Sons, Inc, 2003) Susil, R. C.; Yeung, C. J.; Atalar, Ergin
The design and application of an intravascular extended sensitivity (IVES) MRI antenna is described. The device is a loopless antenna design that incorporates both an insulating, dielectric coating and a winding of the antenna whip into a helical shape. Because this antenna produces a broad region of high SNR and also allows for imaging near the tip of the device, it is useful for imaging long, luminal structures. To elucidate the design and function of this device, the effects of both insulation and antenna winding were characterized by theoretical and experimental studies. Insulation broadens the longitudinal region over which images can be collected (i.e., along the lumen of a vessel) by increasing the resonant pole length. Antenna winding, conversely, allows for imaging closer to the tip of the antenna by decreasing the resonant pole length. Over a longitudinal region of 20 cm, the IVES imaging antenna described here produces a system SNR of approximately 40,000/r (mL-1Hz1/2), where r is the radial distance from the antenna axis in centimeters. As opposed to microcoil antenna designs, these antennas do not require exact positioning and allow for imaging over broad tissue regions. While focusing on the design of the IVES antenna, this work also serves to enhance our overall understanding of the properties and behavior of the loopless antenna design. © 2003 Wiley-Liss, Inc.
Open Access
Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method
(Springer, 2009-12-03) Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Ozcelik, S.; Özbay, Ekmel; Balkan, N.
The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities of the bulk GaN layers are extracted from Hall measurements with implementing simple parallel conduction extraction method (SPCEM). It is observed that the resistivity (ρ) increases with decreasing carrier density in the insulating side of the metal-insulator transition for highly resistive GaN layers. Then the conduction mechanism of highly resistive GaN layers changes from an activated conduction to variable range hopping conduction (VRH). In the studied temperature range, ln∈(ρ) is proportional to T -1/4 for the insulating sample and proportional to T -1/2 for the more highly insulating sample, indicating that the transport mechanism is due to VRH.
Open Access
Quantum entanglement of spin-1 bosons with coupled ground states in optical lattices
(IOP Institute of Physics Publishing, 2009) Öztop, B.; Oktel, M. Ö.; Müstecapliolu, Ö. E.; You, L.
We examine particle entanglement, characterized by pseudo-spin squeezing, of spin-1 bosonic atoms with coupled ground states in a one-dimensional optical lattice. Both the superfluid and Mott-insulator phases are investigated separately for ferromagnetic and antiferromagnetic interactions. Mode entanglement is also discussed in the Mott-insulating phase. The role of a small but nonzero angle between the polarization vectors of counter-propagating lasers forming the optical lattice on quantum correlations is investigated as well.