Browsing by Subject "Indium nitride"

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    ItemOpen Access
    Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition
    (Wiley - V C H Verlag GmbH & Co. KGaA, 2015) Alevli, M.; Gungor, N.; Alkis, S.; Ozgit Akgun, C.; Donmez, I.; Okyay, Ali Kemal; Gamage, S.; Senevirathna, I.; Dietz, N.; Bıyıklı, Necmi
    The influences of reactor pressure on the stoichiometry, free carrier concentration, IR and Hall determined mobility, effective optical band edge, and optical phonon modes of HPCVD grown InN films have been analysed and are reported. The In 3d, and N 1s XPS spectra results revealed In-N and N-In bonding states as well as small concentrations of In-O and N-O bonds, respectively in all samples. InN layers grown at 1 bar were found to contain metallic indium, suggesting that the incorporation of nitrogen into the InN crystal structure was not efficient. The free carrier concentrations, as determined by Hall measurements, were found to decrease with increasing reactor pressure from 1.61×1021 to 8.87×1019 cm-3 and the room-temperature Hall mobility increased with reactor pressure from 21.01 to 155.18 cm2/Vs at 1 and 15 bar reactor pressures, respectively. IR reflectance spectra of all three (1, 8, and 15 bar) InN samples were modelled assuming two distinct layers of InN, having different free carrier concentration, IR mobility, and effective dielectric function values, related to a nucleation/interfacial region at the InN/sapphire, followed by a bulk InN layer. The effective optical band gap has been found to decrease from 1.19 to 0.95 eV with increasing reactor pressure. Improvement of the local structural quality with increasing reactor pressure has been further confirmed by Raman spectroscopy measurements. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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    Enhanced light scattering with energy downshifting using 16 nm indium nitride nanoparticles for improved thin-film a-Si N-i-P solar cells
    (Electrochemical Society Inc., 2015-05) Chowdhury F.I.; İslam, K.; Alkış, Sabri; Ortaç, Bülend; Alevli, Mustafa; Dietz, N.; Okyay, Ali Kemal; Nayfeh, A.
    In this work the effect of Indium nitride (InN) nanoparticles (NPs) on the performance of a-Si: H solar cells has been investigated. The average Jsc of InN NPs coated cells was found 6.76 mA/cm2 which is 16.69% higher than the average Jsc of the reference cell which was 5.79 mA/cm2. Average efficiency of InN NPs coated cells showed 14.16% increase from 3.32% to 3.79%. Peak EQE has increased from 44.8% at 500 nm to 51.67% at 510 nm and peak IQE has increased from 51.70% at 510 nm to 68.38% at 500 nm for InN NPs coated cell. Further study shows that EQE change is larger between 510 nm-700 nm compared to IQE change indicting a surface scattering mechanism that reduces the reflectivity. However, between 400 nm-510 nm IQE change is larger than EQE change which indicates that energy downshifting mechanism is dominating. So overall performance enhancement can be attributed to the scattering and photoluminescence properties of InN NPs that enhances absorption inside a-Si: H solar cells. © The Electrochemical Society.
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    Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles
    (Institute of Physics Publishing Ltd., 2015) Alkis, S.; Chowdhury, F. I.; Alevli, M.; Dietz, N.; Yalızay, B.; Aktürk, S.; Nayfeh, A.; Okyay, Ali Kemal
    In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements indicate that there is an absolute 1.5% increase (Δη) in the overall solar cell efficiency due to the presence of InN-Ps. Within the spectral range 300-1100 nm, improvements of up to 8.26% are observed in the external quantum efficiency (EQE) and increases of up to 8.75% are observed in the internal quantum efficiency (IQE) values of the corresponding solar cell. The enhancement in power performance is due to the down-shifting properties of the InN-Ps. The electrical measurements are supplemented by TEM, Raman, UV/VIS and PL spectroscopy of the InN-Ps. © 2015 IOP Publishing Ltd.
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    A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation
    (IEEE, 2014) Tekcan, B.; Alkis, S.; Alevli, M.; Dietz, N.; Ortac, B.; Bıyıklı, Necmi; Okyay, Ali Kemal
    We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically active absorption region. InN-NCs are sandwiched between thin insulating films to reduce the electrical leakage current. Under-1 V applied bias, the recorded photoresponsivity values within 600-1100-nm wavelength range are as high as (3.05 × 10-2) mA/W. An ultrathin layer of nanocrystalline InN thin film is, therefore, a promising candidate for NIR detection in large area schemes. © 2014 IEEE.