Browsing by Subject "Impurity levels"

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    Thermally stimulated current observation of trapping centers in undoped GaSe layered single crystals
    (Wiley, 2001) Gasanly, N. M.; Aydınlı, A.; Salihoglu, Ö.
    Undoped p-GaSe layered single crystals were grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10-300 K were performed at a heating rate of 0.18 K/s. The analysis of the data revealed three trap levels at 0.02, 0.10 and 0.26 eV. The calculation for these traps yielded 8.8 × 10-27, 1.9 × 10-25, and 3.2 × 10-21 cm2 for capture cross sections and 3.2 × 1014, 1.1 × 1016, and 1.2 × 1016 cm-3 for the concentrations, respectively.