Browsing by Subject "Hydrogenated amorphous silicon nitride"
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Item Open Access Alteration of spontaneous emission in hydrogenated amorphous silicon nitride microcavities(Elsevier BV, 1998) Serpengüzel, A.; Aydınlı, Atilla; Bek, A.A Fabry-Perot microcavity is used for the alteration of the spontaneous emission spectrum in hydrogenated amorphous silicon nitride. The modified photon density of states of the Fabry-Perot microcavity are responsible for the alteration of the spontaneous emission spectrum. The Fabry-Perot microcavity enhances the intensity of the spontaneous emission signal by a factor of 4 at the photon energies corresponding to the microcavity resonances. The 0.075 eV wide spontaneous emission linewidth of the Fabry-Perot microcavity resonances is 7 times smaller than the 0.5 eV wide spontaneous emission linewidth of the bulk hydrogenated amorphous silicon nitride. © 1998 Elsevier Science B.V. All rights reserved.Item Open Access Visible photoluminescence from low temperature deposited hydrogenated amorphous silicon nitride(Pergamon Press, 1996) Aydınlı, A.; Serpengüzel, A.; Vardar, D.Hydrogenated amorphous silicon nitride (a-SiNx:H) samples have been prepared by plasma enhanced chemical vapor deposition (PECVD) using a mixture of silane (SiH4), nitrogen and ammonia (NH3). Most films exhibit visible photoluminescence (PL) and some emit strong PL after annealing. While films grown without NH3 exhibit PL in the deep red, those grown with NH3 show PL in the green. The PL properties of these films with no oxygen (O) content are similar to those of silicon oxide (SiOx) films and porous Si. Using infrared and X-ray Photoelectron Spectroscopy, we suggest that PL from a-SiNx:H films originate from Si clusters which form during PECVD and crystallize upon annealing. We propose that the presence of O is not necessary for efficient PL.