Alteration of spontaneous emission in hydrogenated amorphous silicon nitride microcavities
Date
1998
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Source Title
Journal of Non-Crystalline Solids
Print ISSN
0022-3093
Electronic ISSN
Publisher
Elsevier BV
Volume
227-230
Issue
PART 2
Pages
1142 - 1145
Language
English
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Journal Title
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Volume Title
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Abstract
A Fabry-Perot microcavity is used for the alteration of the spontaneous emission spectrum in hydrogenated amorphous silicon nitride. The modified photon density of states of the Fabry-Perot microcavity are responsible for the alteration of the spontaneous emission spectrum. The Fabry-Perot microcavity enhances the intensity of the spontaneous emission signal by a factor of 4 at the photon energies corresponding to the microcavity resonances. The 0.075 eV wide spontaneous emission linewidth of the Fabry-Perot microcavity resonances is 7 times smaller than the 0.5 eV wide spontaneous emission linewidth of the bulk hydrogenated amorphous silicon nitride. © 1998 Elsevier Science B.V. All rights reserved.
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Keywords
Fabry-Perot microcavity, Hydrogenated amorphous silicon nitride, Spontaneous emission spectrum, Electron emission, Electron resonance, Electronic density of states, Hydrogenation, Silicon nitride, Fabry-Perot microcavity, Hydrogenated amorphous silicon nitride, Spontaneous emission spectrum, Amorphous silicon