Browsing by Subject "Hydrogen annealing"

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    Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing
    (2008-10) Yu, H.-Y.; Park, J.-H.; Okyay, Ali Kemal; Saraswat, K. C.
    We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). Very high quality Ge layers can be selectively integrated on Si CMOS platform with this technique. We confirm the reduction of dislocation density in Ge layers using AFM surface morphology study. In addition, in situ doping of Ge layers is achieved and MOS capacitor structures are studied. ©The Electrochemical Society.
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    High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing
    (American Institute of Physics, 2010-08-09) Yu, H. Y.; Cheng, S. L.; Park, J. H.; Okyay, Ali Kemal; Onbal, M. C.; Ercan, B.; Nishi, Y.; Saraswat, K. C.
    Germanium-on-insulator (GOI) is desired for high performance metal-oxide-semiconductor transistors and monolithically integrated optoelectronics. We demonstrate a promising approach to achieve single-crystal defect-free GOI by using lateral over-growth through SiO2 window. The dislocations due to the lattice mismatch are effectively terminated and reduced in SiO2 trench by selective area heteroepitaxy combined with hydrogen annealing. Low defect density of 4× 106 cm-2 and low surface roughness of 0.7 nm (root-mean-square) on GOI are confirmed by plan-view transmission electron microscopy and atomic force microscopy analysis. In addition, the excellent metal-semiconductor-metal diode electrical characteristics fabricated on this GOI confirm Ge crystal quality. The selectively grown GOI structure can provide the monolithic integration of SiGe based devices on a Si very large scale integration (VLSI) platform