Browsing by Subject "Electrooptical devices"

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    Characterization of thermally poled germanosilicate thin films
    (Optical Society of American (OSA), 2004) Ozean, A.; Digonnet, M.J.F.; Kino G.S.; Ay F.; Aydınlı, Atilla
    We report measurements of the nonlinearity profile of thermally poled low-loss germanosilicate films deposited on fused-silica substrates by PECVD, of interest as potential electro-optic devices. The profiles of films grown and poled under various conditions all exhibit a sharp peak ∼0.5 μm beneath the anode surface, followed by a weaker pedestal of approximately constant amplitude down to a depth of 13-16 μm, without the sign reversal typical of poled undoped fused silica. These features suggest that during poling, the films significantly slow down the injection of positive ions into the structure. After local optimization, we demonstrate a record peak nonlinear coefficient of ∼1.6 pm/V, approximately twice as strong as the highest reliable value reported in thermally poled fused silica glass, a significant improvement that was qualitatively expected from the presence of Ge. ©2004 Optical Society of America.
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    Compact optical temporal processors
    (Optical Society of America, 1995) Mendlovic, D.; Melamed, O.; Özaktaş, Haldun M.
    Optical signal processing can be done with time-lens devices. A temporal processor based on chirp-z transformers is suggested. This configuration is more compact than a conventional 4-f temporal processor. On the basis of implementation aspects of such a temporal processor, we did a performance analysis. This analysis leads to the conclusion that an ultrafast optical temporal processor can be implemented.
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    Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures
    (IEEE, 2007) Akca, B. Imran; Dana, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li L.; Dagli, N.; Fiore, A.
    The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed. © 2003 Optical Society of America.
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    Phase-matched self-doubling optical parametric oscillator
    (IEEE, 1996) Kartaloğlu, Tolga; Köprülü, Kahraman G.; Aytür, Orhan
    A new self-doubling optical parametric oscillator (OPO) uses a single nonlinear crystal for both parametric generation and frequency doubling. It is based on a KTiOPO4 (KTP) crystal pumped by a Ti:Sapphire laser operating at a wavelength of 739 nm. The crystal is cut such that the signal wavelength of the OPO is at 1064 nm, corresponding to an idler wavelength of 2420 nm. The OPO cavity resonates only the signal wavelength. The signal beam is also phase-matched for second harmonic generation (SHG) at the same crystal orientation. With proper polarization rotation, an output beam at a wavelength of 532 nm can be obtained.