Browsing by Subject "Electrical conduction"

Filter results by typing the first few letters
Now showing 1 - 4 of 4
  • Thumbnail Image
    ItemOpen Access
    Atomic-layer-deposited zinc oxide as tunable uncooled infrared microbolometer material
    (Wiley-VCH Verlag, 2014) Battal, E.; Bolat, S.; Tanrikulu, M. Y.; Okyay, Ali Kemal; Akin, T.
    ZnO is an attractive material for both electrical and optical applications due to its wide bandgap of 3.37 eV and tunable electrical properties. Here, we investigate the application potential of atomic-layer-deposited ZnO in uncooled microbolometers. The temperature coefficient of resistance is observed to be as high as-10.4% K-1 near room temperature with the ZnO thin film grown at 120 °C. Spectral noise characteristics of thin films grown at various temperatures are also investigated and show that the 120 °C grown ZnO has a corner frequency of 2 kHz. With its high TCR value and low electrical noise, atomic-layer-deposited (ALD) ZnO at 120 °C is shown to possess a great potential to be used as the active layer of uncooled microbolometers. The optical properties of the ALD-grown ZnO films in the infrared region are demonstrated to be tunable with growth temperature from near transparent to a strong absorber. We also show that ALD-grown ZnO can outperform commercially standard absorber materials and appears promising as a new structural material for microbolometer-based applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
  • Thumbnail Image
    ItemOpen Access
    Comment on "modeling the electrical conduction in DNA nanowires: Charge transfer and lattice fluctuation theories"
    (American Physical Society, 2016) Panahi, M.; Chitsazanmoghaddam, M.
    In a recent paper [S. Behnia and S. Fathizadeh, Phys. Rev. E 91, 022719 (2015)10.1103/PhysRevE.91.022719] an analytical approach is proposed for the investigation of the conductivity properties of DNA. The authors use mean Lyapunov exponent methods as the backbone of their approach and try to interpret properties of the system based on its behavior. Their interpretation regarding the change in nature of the mean Lyapunov exponent at the denaturation temperatures and discussions of stability and instability based on the mean Lyapunov exponent method are questioned. Moreover there is misunderstanding between mean Lyapunov exponent and Lyapunov exponent. © 2016 American Physical Society.
  • Thumbnail Image
    ItemOpen Access
    Electrical conduction properties of Si δ-doped GaAs grown by MBE
    (2009) Yildiz, A.; Lisesivdin, S.B.; Altuntas H.; Kasap, M.; Ozcelik, S.
    The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si δ-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures. © 2009 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    ItemOpen Access
    Strongly Scale-Dependent Charge Transport From Interconnections of Silicon Quantum Dots and Nanowires
    (Cambridge University Press, 2017) Ilday, S.
    We present the first characterization of strongly scale-dependent charge transport of a unique, hierarchical complex topology: an interconnected random network of silicon quantum dots (QDs) and nanowires. We show that this specific topology has different charge transport characteristics on the nanoscale and the microscale: photogenerated charge carriers tend to be confined inside the QDs and externally injected charge carriers flow preferably along the nanowires. The former enables expression of quantum confinement properties, and the latter mainly contributes to the good electrical conduction on the microscale. Our findings strongly suggest that this multifunctionality can be controlled and used in photovoltaic device applications.