Browsing by Subject "Electrical characterization"

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    Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures
    (ELSEVIER, 2010) Arslan, E.; Bütün, S.; Şafak, Y.; Uslu, H.; Tascioglu I.; Altindal, S.; Özbay, Ekmel
    The forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiN x) on the main electrical parameters such as the ideality factor (n), zero-bias barrier height ( B0), series resistance (R s), interface-state density (N ss). The energy density distribution profiles of the N ss were obtained from the forward bias I-V characteristics by taking into account the voltage dependence of the effective barrier height ( e) and ideality factor (n V) of devices. In addition, the N ss as a function of E c-E ss was determined from the low-high frequency capacitance methods. It was found that the values of N ss and R s in SBD HEMTs decreases with increasing insulator layer thickness.
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    ItemOpen Access
    On-chip integrated nanowire devices with controllable nanogap for manipulation, capturing, and electrical characterization of nanoparticles
    (IEEE, 2009) Uran, Can; Ünal, Emre; Kizil, R.; Demir, Hilmi Volkan
    Dielectrophoresis (DEP) allows for electric field assisted assembly in spatially non-uniform field distribution, where the induced moment is translated into a net force on polarized particles towards the high field gradient. For example, for a spherical particle of radius r with a permittivity constant ofεp in a host medium with the permittivity ofε m, the dielectrophoretic force is given by (1): where r is the particle radius, ω is the angular frequency and Erms is the root mean square electric field. K is the Clausius-Mossotti function, which depends on the complex permittivity of the spherical particle and the medium [1].IEEE.