Browsing by Subject "Chemical elements"

Now showing 1 - 6 of 6

Open Access
Contact imaging in the atomic force microscope using a higher order flexural mode combined with a new sensor
(A I P Publishing LLC, 1996-01) Minne, S. C.; Manalis, S. R.; Atalar, Abdullah; Quate, C. F.
Using an atomic force microscope (AFM) with a silicon cantilever partially covered with a layer of zinc oxide (ZnO), we have imaged in the constant force mode by employing the ZnO as both a sensor and actuator. The cantilever deflection is determined by driving the ZnO at the second mechanical resonance while the tip is in contact with the sample. As the tip‐sample force varies, the mechanical boundary condition of the oscillating cantilever is altered, and the ZnO electrical admittance is changed. Constant force is obtained by offsetting the ZnO drive so that the admittance remains constant. We have also used the ZnO as an actuator and sensor for imaging in the intermittent contact mode. In both modes, images produced by using the ZnO as a sensor are compared to images acquired with a piezoresistive sensor.
Open Access
Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films
(A I P Publishing LLC, 2015) Ceylan, A.; Rumaiz, A. K.; Caliskan, D.; Ozcan, S.; Özbay, Ekmel; Woicik, J. C.
We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600 °C for 30, 60, and 90 s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27 nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA. © 2015 AIP Publishing LLC.
Open Access
Independent parallel lithography using the atomic force microscope
(A I P Publishing LLC, 1996-05) Minne, S. C.; Manalis, S. R.; Atalar, Abdullah; Quate, C. F.
Independent parallel features have been lithographically patterned with a 2×1 array of individually controlled cantilevers using an atomic force microscope. Control of the individual cantilevers was achieved with an integrated piezoelectric actuator in feedback with a piezoresistive sensor. Patterns were formed on 〈100〉 single crystal silicon by using a computer controlled tip voltage to locally enhance the oxidation of the silicon. Using the piezoresistor directly as a force sensor, parallel images can be simultaneously acquired in the constant force mode. A discussion of electrostatic forces due to applied tip voltages, hysteresis characteristics of the actuator, and the cantilever system is also presented.
Open Access
Interdigital cantilevers for atomic force microscopy
(A I P Publishing LLC, 1996-10) Manalis, S. R.; Minne, S. C.; Atalar, Abdullah; Quate, C. F.
We present a sensor for the atomic force microscope (AFM) where a silicon cantilever is micromachined into the shape of interdigitated fingers that form a diffraction grating. When detecting a force, alternating fingers are displaced while remaining fingers are held fixed. This creates a phase sensitive diffraction grating, allowing the cantilever displacement to be determined by measuring the intensity of diffracted modes. This cantilever can be used with a standard AFM without modification while achieving the sensitivity of the interferometer and maintaining the simplicity of the optical lever. Since optical interference occurs between alternating fingers that are fabricated on the cantilever, laser intensity rather than position can be measured by crudely positioning a photodiode. We estimate that the rms noise of this sensor in a 10 hz–1 kHz bandwidth is ∼0.02 Å and present images of graphite with atomic resolution.
Open Access
Photonic band gaps with layer-by-layer double-etched structures
(A I P Publishing LLC, 1996-09-03) Biswas, R.; Özbay, Ekmel; Ho, K. M.
Periodic layer‐by‐layer dielectric structures with full three‐dimensional photonic band gaps have been designed and fabricated. In contrast to previous layer‐by‐layer structures the rods in each successive layer are at an angle of 70.5° to each other, achieved by etching both sides of a silicon wafer. Photonic band‐structure calculations are utilized to optimize the photonic band gap by varying the structural geometry. The structure has been fabricated by double etching Si wafers producing millimeter wavephotonic band gaps between 300 and 500 GHz, in excellent agreement with band calculations. Overetching this structure produces a multiply connected geometry and increases both the size and frequency of the photonic band gap, in very good agreement with experimental measurements. This new robust double‐etched structure doubles the frequency possible from a single Si wafer, and can be scaled to produced band gaps at higher frequencies. © 1996 American Institute of Physics
Open Access
Silicon micromachined ultrasonic immersion transducers
(A I P Publishing LLC, 1996-12-09) Soh, H. T.; Ladabaum, I.; Atalar, Abdullah; Quate, C. F.; Khuri-Yakub, B. T.
Broadband transmission of ultrasound in water using capacitive, micromachined transducers is reported. Transmission experiments using the same pair of devices at 4, 6, and 8 MHz with a signal‐to‐noise ratio greater than 48 dB are presented. Transmission is observed from 1 to 20 MHz. Better receiving electronics are necessary to demonstrate operation beyond this range. Furthermore, the same pair of transducers is operated at resonance to demonstrate ultrasound transmission in air at 6 MHz. The versatile transducers are made using siliconsurfacemicromachining techniques. Computer simulations confirm the experimental results and are used to show that this technology promises to yield immersion transducers that are competitive with piezoelectric devices in terms of performance, enabling systems with 130 dB dynamic range. The advantage of the micromachined transducers is that they can be operated in high‐temperature environments and that arrays can be fabricated at lower cost.