Browsing by Subject "Charging"

Now showing 1 - 8 of 8

Open Access
Au nanoparticles in PMMA matrix: In situ synthesis and the effect of Au nanoparticles on PMMA conductivity
(Elsevier, 2010-09-01) Yilmaz, E.; Süzer, Şefik
Thin PMMA films with and without gold nanoparticles were subjected to +/-10V d.c. and a.c. (square wave) excitations in various frequencies while recording their XPS spectra, and the resulting differences due to charging were examined. Both pure PMMA films and films containing gold nanoparticles showed charging shifts, but those of pure PMMA were more extensive than of PMMA containing gold nanoparticles, suggesting enhanced conductivity, induced by the incorporated gold nanoparticles. Non-charging behavior for these films was also observed with the increase of gold nanoparticle concentration. Gold nanoparticles were in situ synthesized and photo-patterned within the polymer films by UV irradiation.
Open Access
Dynamical XPS measurements for probing photoinduced voltage changes
(2010) Sezen, H.; Süzer, Şefik
Photoillumination with 405 nm laser causes shifts in XPS peaks of n-Si(100), and CdS. To distinguish between surface photovoltage (SPV), and charging, dynamical measurements are performed, while sample is subjected to square wave pulses of ± 10.00 V amplitude, and 10-3-10 5 Hz frequency. For n-Si, Si2p peaks are twinned at + 10.00 and -10.00, yielding always 20.00 eV difference. Photoillumination shifts the twinned peaks to higher energies, but the difference is always 20.00 eV. However, for CdS, the measured binding difference of Cd3d peaks exhibits strong frequency dependence due to charging, which indicates that both fast SPV and slow charging effects are operative.
Open Access
Impedance-type measurements using XPS
(Optical Society of America, 2009) Süzer, Şefik; Abelev, E.; Bernasek, S. L.
An impedance type of measurement using X-ray photoelectron spectroscopy is applied for probing charging/discharging dynamics of a sample containing Rb deposited on a SiO(2)/Si substrate containing an octadecyltrichlorosilane (OTS) bilayer coating. The OTS bilayer coatings have possible use as anti-relaxation wall coatings for alkali atom vapor cells in miniaturized instruments such as chip-scale atomic clocks, and/or magnetometers. The measurement consists of the application of bipolar square wave pulses of +/- 10.0 V amplitude to the sample with varying frequencies in the range of 10(-2) to 10(2) Hz while recording X-ray photoemission data. For a conducting sample this type of measurement twins all the photoemission peaks at -10.0 and +10.0 eV positions at all frequencies with exactly 20.0 eV difference between them. However, for samples amenable to charging, the difference between the twinned peaks is less than 20.0 eV, and gradually decreases at correspondingly lower frequencies. For the sample under consideration here at 0.01 Hz, the twinned O1s and Si2p peaks, representing the SiO(2) substrate, are separated by 18.2 eV, displaying a 1.8 eV charging shift. These positions differ from those of the C1s (18.0 eV) representing the OTS bilayer and the Rb3d peaks (18.1 eV). These results reveal that the Rb is electrically (perhaps also chemically) isolated from the OTS bilayer, which may be correlated with the improved performance of the OTS bilayers as anti-relaxation coatings in these alkali atom magnetometer cells.
Open Access
Investigation of electrical properties of surface structures by X-Ray photoelectron spectroscopic technique under external voltage stimuli
(2005) Demirok, U. Korcan
Electrical properties of surface structures are analyzed using XPS (X-Ray Photoelectron Spectroscopy) by means of external stimuli together with a novel technique allowing the user to record 200 conventional spectra in a period of one second with a time resolution of 5ms. Charging processes of surface structures such as SiO2 and C12-thiol-capped gold nanoclusters are monitored by time resolved XPS technique which gives an approximate charging constant of the system (RC), and electrical parameters like resistance and capacitance are estimated using external biasing and other relevant time resolved XPS data. Moreover, development and optimization of the technique are carried out by certain parameters and observing the changes in the time constants and binding energy shifts. It is also shown that application of positive and negative external bias can be used to identify two different forms of gold that exist together in the same sample, as nanoparticles and bulk metal, by means of stimulating the charging-induced-separation of the Au 4f peaks which would otherwise appear as overlapped photoemission signals in the grounded spectrum.
Open Access
Investigation on electrical charging/discharging properties of thin ps/pmma polymeric films by dynamic x-ray photoelectron spectroscopy
(2008) Sezen, Hikmet
Electrical charging/discharging properties of thin layers of spin coated pure PS polystyrene (PS), and pure poly(methyl methacrylate), (PMMA) and an immiscible PS/PMMA blend are studied with externally applied DC and dynamic(squarewave stress) X-Ray Photoelectron Spectroscopy (XPS). PS and PMMA exhibit quite different charging properties under DC stress. Due to the different charging properties of PS and PMMA domains within an immiscible PS/PMMA blend film, charge contrast or phase separation is clearly observed between domains. Electrical parameters of PS and PMMA thin films while employing a squarewave pulse stress in a 10-3 - 103 Hz range of frequency are probed by dynamic XPS. A model, which can simulate the dynamical XPS measurements, is shown to lead to obtain effective resistance and capacitance values for each polymer. RC time constants and inflection points(frequency) are also determined. Moreover, thickness also affects the charging/discharging properties and other electrical parameters of polymeric thin films. Furthermore, to mimic certain dielectric properties of thin polymeric films and to validate our model, we have included an externally RC circuit to a conducting graphite sample under both DC and squarewave pulse stresses.
Open Access
Methods for probing charging properties of polymeric materials using XPS
(2010) Sezen, H.; Ertas, G.; Süzer, Şefik
Various thin polystyrene, PS, and poly(methyl methacrylate), PMMA and PS + PMMA blend films have been examined using the technique of recording X-ray photoelectron spectrum while the sample is subjected to ±10 V d.c. bias, and three different forms of (square-wave (SQW), sinusoidal (SIN) and triangular (TRG)), a.c. pulses. All films exhibit charging shifts as observed in the position of the corresponding C1s peak under d.c. bias. The a.c. pulses convert the single C1s peak to twinned peaks in the case of the square-wave form, and distort severely in the cases of the SIN, and TRG forms, and all three of them exhibit strong frequency dependence. In order to mimic and better understand the behavior of these polymeric materials, an artificial dielectric system consisting of a clean Si-wafer coupled to an external 1 MΩ resistor and 56 nF capacitor is created, and its response to different forms of voltage stimuli, is examined in detail. A simple electrical circuit model is also developed treating the system as consisting of a parallel resistor and a series capacitor. With the help of the model, the response of the artificial system is successfully calculated as judged by comparison with the experimental data. Using one high frequency SQW measurements, the off-set in the charging shift due to the extra low-energy neutralizing electrons is estimated. After correcting the corresponding off-set shifts, the XPS spectra of the three different PS films, one PMMA, and one PS + PMMA blend film are re-examined. As a result of these detailed analysis, there emerges a clear relationship between the thicknesses of the PS films with their charging abilities. In the blend film, PS and PMMA domains are electrically separated, and exhibit different charging shifts, however, the presence of one is felt by the other. Hence, the PS component shifts are larger in the blend, due to the presence of PMMA domains, which has intrinsically a larger Reff, and conversely the PMMA component shifts are smaller due to the presence of PS domains.
Open Access
Photo-dynamic XPS for investigating photoinduced voltage changes in semiconducting materials
(2011) Sezen, Hikmet
The main motivation of this Ph.D. study is investigation of the photoinduced voltage changes in semiconductive materials with X-ray Photoelectron Spectroscopy (XPS). For this purpose, we have developed a technique for recording the shifts in the positions of the XPS peaks in response to different waveforms of electrical and/or optical stimuli for tracing dynamics of the developed potentials originating from intrinsic or extrinsic factors of the semiconductive materials such as charging/discharging, photoconductivity, surface photovoltage, band-bending/flattening/inversion, etc. Within this purpose, the surface photovoltage behaviors of n- and p-type doped Si and GaN samples are examined with the photo-dynamic XPS, to follow the behavior of the bandbending under photoillumination in both static and dynamic fashions. The band inversion effects are clearly observed on the n- and p-Si samples in the presence of a dielectric silica overlayer and on the p-GaN sample due to variation of the illuminating laser energies Moreover, the extent of the dopant dependent XPS peak shifts of the n- and p-Si samples are assessed after correction of their surface photovoltage values. A laser patterned silicon wafer with a high-power near infrared fiber laser is also investigated. While the patterned silica domains have identical chemical composition with the non-patterned regions, an investigation with dynamic XPS clearly reveals distinct dielectric characteristics of the patterned domains. Electrical parameters of CdS thin film are extracted by dynamic XPS with and without photoillumination. The photo-dynamic XPS technique has also provided useful information by disentanglement of processes; charging/discharging, photoconductivity, and surface photovoltage. Furthermore, location (space) dependent resistance and chemical profile of a CdS based Light Dependent Resistor (LDR) is also probed during realistic operational conditions, by utilizing spatially resolved XPS analysis (in the area mapping mode). In addition, with the XPS mapping analysis defects and malfunctioning sites/domains have been located under various experimental and preparation conditions.
Open Access
Unbiased charged circular CMUT microphone: lumped-element modeling and performance
(Institute of Electrical and Electronics Engineers, 2018) Köymen, Hayrettin; Atalar, Abdullah; Güler, S.; Köymen, I.; Taşdelen, A. S.; Ünlügedik, A.
An energy-consistent lumped-element equivalent circuit model for charged circular capacitive micromachined ultrasonic transducer (CMUT) cell is derived and presented. It is analytically shown and experimentally verified that a series dc voltage source at the electrical terminals is sufficient to model the charging in CMUT. A model-based method for determining this potential from impedance measurements at low bias voltages is presented. The model is validated experimentally using an airborne CMUT, which resonates at 103 kHz. Impedance measurements, reception measurements at resonance and off-resonance, and the transient response of the CMUT are compared with the model predictions.