Browsing by Subject "Characteristic parameter"

Now showing 1 - 2 of 2

Open Access
Study of junction and bias parameters in readout of phase qubits
(2012) Zandi H.; Safaei, S.; Khorasani, S.; Fardmanesh, M.
The exact numerical solution of the nonlinear Ginzburg-Landau equation for Josephson junctions is obtained, from which the precise nontrivial current density and effective potential of the Josephson junctions are found. Based on the resulting potential well, the tunneling probabilities of the associated bound states are computed which are in complete agreement with the reported experimental data. The effects of junction and bias parameters such as thickness of the insulating barrier, cross sectional area, bias current, and magnetic field are fully investigated using a successive perturbation approach. We define and compute figures of merit for achieving optimal operation of phase qubits and measurements of the corresponding states. Particularly, it is found that Josephson junctions with thicker barriers yield better performance in measurements of phase qubits. The variations of characteristic parameters such as life time of the states due to the above considered parameters are also studied and discussed to obtain the appropriate configuration setup.
Open Access
Ta/Si Schottky diodes fabricated by magnetron sputtering technique
(2010) Ocak, Y.S.; Genisel, M.F.; Kiliçoǧlu, T.
Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier height, ideality factor and series resistance have been calculated using current voltage (I-V) measurements. It has seen that the diodes have ideality factors more than unity and the sum of their barrier heights is 1.21 eV which is higher than the band gap of the silicon (1.12 eV). The results have been attributed the effects of inhomogeneities at the interface of the devices and native oxide layer. In addition, the barrier height values determined using capacitance-voltage (C-V) measurements have been compared the ones obtained from I-V measurements. It has seen that the interface states have strong effects on electrical properties of the diodes such as C-V and Rs-V measurements. © 2010 Elsevier Ltd. All rights reserved.