Browsing by Subject "Bridgman technique"

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    Thermally stimulated current observation of trapping centers in undoped GaSe layered single crystals
    (Wiley, 2001) Gasanly, N. M.; Aydınlı, A.; Salihoglu, Ö.
    Undoped p-GaSe layered single crystals were grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10-300 K were performed at a heating rate of 0.18 K/s. The analysis of the data revealed three trap levels at 0.02, 0.10 and 0.26 eV. The calculation for these traps yielded 8.8 × 10-27, 1.9 × 10-25, and 3.2 × 10-21 cm2 for capture cross sections and 3.2 × 1014, 1.1 × 1016, and 1.2 × 1016 cm-3 for the concentrations, respectively.
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    Trapping centers in undoped GaS layered single crystals
    (Springer, 2003) Gasanly, N. M.; Aydınlı, Atilla; Yüksek, N. S.; Salihoglu, Ö.
    Nominally undoped p-GaS layered single crystals were grown using the Bridgman technique. Thermally stimulated current measurements in the temperature range 10-300 K were performed at a heating rate of 0.10 K/s. The analysis of the data revealed six trap levels at 0.05, 0.06, 0.12, 0.63, 0.71, and 0.75 eV. The calculations for these traps yielded 1.2 × 10-21, 2.9 × 10-23, 2.4 × 10-21, 8.0 × 10-9, 1.9 × 10-9 and 4.3 × 10-10 cm2 for the capture cross sections and 1.6 × 1013, 5.0 × 1012, 7.3 × 1012, 1.2 × 1014, 8.9 × 1013 and 2.6 × 1013 cm-3 for the concentrations, respectively.