Browsing by Subject "Bandbending"
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Item Open Access Analysis of defect related optical transitions in biased AlGaN/GaN heterostructures(2010) Bengi, A.; Lisesivdin, S.B.; Kasap, M.; Mammadov, T.; Ozcelik, S.; Özbay, EkmelThe optical transitions in AlGaN/GaN heterostructures that are grown by metalorganic chemical vapor deposition (MOCVD) have been investigated in detail by using Hall and room temperature (RT) photoluminescence (PL) measurements. The Hall measurements show that there is two-dimensional electron gas (2DEG) conduction at the AlGaN/GaN heterointerface. PL measurements show that in addition to the characteristic near-band edge (BE) transition, there are blue (BL) and yellow luminescence (YL) bands, free-exciton transition (FE), and a neighboring emission band (NEB). To analyze these transitions in detail, the PL measurements were taken under bias where the applied electric field changed from 0 to 50 V/cm. Due to the applied electric field, band bending occurs and NEB separates into two different peaks as an ultraviolet luminescence (UVL) and Y4 band. Among these bands, only the yellow band is unaffected with the applied electric field. The luminescence intensity change of these bands with an electric field is investigated in detail. As a result, the most probable candidate of the intensity decrease with an increasing electric field is the reduction in the radiative lifetime. © 2010 Elsevier Ltd. All rights reserved.Item Open Access Communication: Enhancement of dopant dependent x-ray photoelectron spectroscopy peak shifts of Si by surface photovoltage(2011) Sezen, H.; Süzer, ŞefikBinding energies measured by x-ray photoelectron spectroscopy (XPS) are influenced by doping, since electrons are transferred to (p-type) and from (n-type) samples when they are introduced into the spectrometer, or brought into contact with each other (p-n junction). We show that the barely measurable Si2p binding energy difference between moderately doped n- and p-Si samples can be enhanced by photoillumination, due to reduction in surface band-bending, which otherwise screens this difference. Similar effects are also measured for samples containing oxide layers, since the band-bending at the buried oxide-Si interfaces is manifest as photovoltage shifts, although XPS does not probe the interface directly. The corresponding shift for the oxide layer of the p-Si is almost twice that of without the oxide, whereas no measurable shifts are observable for the oxide of the n-Si. These results are all related to band-bending effects and are vital in design and performance of photovoltaics and other related systems.