Browsing by Subject "Atomic Layer Deposition"
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Item Open Access Ald grown zno as an alternative material for plasmonic and uncooled infrared imaging applications(2014) Kesim, Yunus EmrePlasmonics is touted as a milestone in optoelectronics as this technology can form a bridge between electronics and photonics, enabling the integration of electronics and photonic circuits at the nanoscale. Noble metals such as gold and silver have been extensively used for plasmonic applications due to their ability to support plasmons, yet they suffer from high intrinsic optical losses. Recently, there is an increased effort in the search for alternative plasmonic materials including Si, Ge, III-Nitrides and transparent conductive oxides. The main appeal of these materials, most of them semiconductors, is their lower optical losses, especially in the infrared (IR) regime, compared to noble metals owing to their lower number of free electrons. Other advantages can be listed as low-cost and control on plasma frequency thanks to the tunable electron concentration, i.e. effective doping level. This work focuses on atomic layer deposition (ALD) grown ZnO as a candidate material for plasmonic applications. Optical constants of ZnO are investigated along with figures of merit pertaining to plasmonic waveguides. It is shown that ZnO can alleviate the trade-off between propagation length and mode confinement width owing to tunable dielectric properties. In order to demonstrate plasmonic resonances, a grating structure is simulated using finite-difference-time-domain (FDTD) method and an ultra-wide-band (4-15 µm) infrared absorber is computationally demonstrated. Finally, an all ZnO microbolometer is proposed, where ALD grown ZnO is employed as both the thermistor and the absorber of the microbolometer which is an uncooled infrared imaging unit that relies on the resistance change of the active material (thermistor) as it heats up due to the absorption of incident electromagnetic radiation. The material complexity and process steps of microbolometers could be reduced if the thermistor layer and the absorber layer were consolidated in a single layer. Computational analysis of a basic microbolometer structure using FDTD method is conducted in order to calculate the absorptivity in the long-wave infrared (LWIR) region (8-12 µm). In addition, thermal simulations of the microbolometer structure are conducted using finite element method, and time constant and noise-equivalent-temperature-difference (NETD) values are extracted.Item Open Access Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer(AIP Publishing, 2014) El Atab, B.; Cimen, F.; Alkis, S.; Okyay, Ali Kemal; Nayfeh, A.A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage Vt shift (4 V) at low operating voltage (6/-6 V), good retention (>10 yr), and good endurance characteristic (>104 cycles). This memory performance is compared to control devices with graphene nanoplatelets (or ZnO) and a thicker tunnel oxide. These structures showed a reduced Vt shift and retention characteristic. The GNIZ structure allows for scaling down the tunnel oxide thickness along with improving the memory window and retention of data. The larger Vt shift indicates that the ZnO adds available trap states and enhances the emission and retention of charges. The charge emission mechanism in the memory structures with graphene nanoplatelets at an electric field E ¥ 5.57 MV/cm is found to be based on Fowler-Nordheim tunneling. The fabrication of this memory device is compatible with current semiconductor processing, therefore, has great potential in low-cost nano-memory applications. © 2014 AIP Publishing LLC.Item Open Access Low temperature thin films transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels(AIP Publishing LLC, 2014) Bolat, S.; Ozgit Akgun, C.; Tekcan, B.; Bıyıklı, Necmi; Okyay, Ali KemalWe report GaN thin film transistors (TFT) with a thermal budget below 250 °C. GaN thin films are grown at 200 °C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3 nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (ION/I OFF) of 103 and sub-threshold swing of 3.3 V/decade. The entire TFT device fabrication process temperature is below 250 °C, which is the lowest process temperature reported for GaN based transistors, so far. © 2014 AIP Publishing LLC.Item Open Access Low-Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2/H2 Plasma(Wiley-Blackwell Publishing, Inc., 2014) Haider A.; Ozgit Akgun, C.; Goldenberg, E.; Okyay, Ali Kemal; Bıyıklı, NecmiHexagonal boron nitride (hBN) thin films were deposited on silicon and quartz substrates using sequential exposures of triethylboron and N 2 /H 2 plasma in a hollow-cathode plasma- assisted atomic layer deposition reactor at low temperatures ( ≤ 450 ° C). A non-saturating film deposition rate was observed for substrate temperatures above 250 ° C. BN films were charac- terized for their chemical composition, crystallinity, surface morphology, and optical properties. X-ray photoelectron spec- troscopy (XPS) depicted the peaks of boron, nitrogen, carbon, and oxygen at the film surface. B 1s and N 1s high-resolution XPS spectra confirmed the presence of BN with peaks located at 190.8 and 398.3 eV, respectively. As deposited films were polycrystalline, single-phase hBN irrespective of the deposition temperature. Absorption spectra exhibited an optical band edge at ~ 5.25 eV and an optical transmittance greater than 90% in the visible region of the spectrum. Refractive index of the hBN film deposited at 450 ° C was 1.60 at 550 nm, which increased to 1.64 after postdeposition annealing at 800 ° C for 30 min. These results represent the first demonstration of hBN deposi- tion using low-temperature hollow-cathode plasma-assisted sequential deposition technique. © 2014 The American Ceramic Society.Item Open Access Surface engineered angstrom thick ZnO-sheathed TiO2 nanowires as photoanodes for performance enhanced dye-sensitized solar cells(Royal Society of Chemistry, 2014) Ulusoy, T. G.; Ghobadi, A.; Okyay, Ali KemalThis paper presents a systematic study on the effects of angstrom-thick atomic layer deposited (ALD) ZnO sheaths on hydrothermally-grown TiO2 nanowires (NWs) used as photoanodes in dye-sensitized solar cells (DSSCs). We designed, synthesized and characterized the samples prepared using different numbers of ZnO cycles and compared their photovoltaic (PV) performances. The device consisting of TiO2 NWs coated with the optimum thickness (two cycles) of ZnO shell exhibits a three-fold increase in efficiency compared to a control reference device. This paper reports results and features that demonstrate the passivation of surface state traps upon deposition of ZnO shells. While this passivation of surface traps provides a reduction in the back-reactions of the surface state mediated electrons (KET trap), it is speculated that ZnO-induced surface band bending (SBB) substantially reduces the recombination rate of the device by reducing the recombination rate of the conduction band (CB) electrons (KET CB). Moreover, an enhancement in the amount of dye uptake for ZnO-coated TiO2 samples is observed and explained with the isoelectric point (IEP) concept. In spite of the excellent PV power conversion efficiencies achieved by the first ZnO cycles, thicker layers impede the electron injection rate, reducing the efficiency of the device by capturing the photogenerated dye electrons in ZnO quantum wells. Here, we investigate the mechanisms contributing to this unprecedented change and correlate them with the enhancement in device efficiency.Item Open Access TiO2 thin film transistor by atomic layer deposition(SPIE, 2013) Okyay, Ali Kemal; Oruç, Feyza B.; Çimen, Furkan; Aygün, Levent E.In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO 2 films are amorphous and not suitable as TFT channel material. In order to use the film as channel material, a post-annealing process is needed. Annealed films transform into a polycrystalline form containing mixed anatase and rutile phases. For this purpose, devices are annealed at 475°C and observed that their threshold voltage value is 6.5V, subthreshold slope is 0.35 V/dec, Ion/Ioff ratios 2.5×106 and mobility value is 0.672 cm2/V.s. Optical response measurements showed that devices exhibits decent performance at ultraviolet region where TiO 2 has band to band absorption mechanism. © 2013 SPIE.