Browsing by Subject "Analytical expressions"
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Item Open Access Boundary element method for optical force calibration in microfluidic dual-beam optical trap(SPIE, 2015) Solmaz, Mehmet E.; Çetin, Barbaros; Baranoglu, B.; Serhatloglu, Murat; Bıyıklı, NecmiThe potential use of optical forces in microfluidic environment enables highly selective bio-particle manipulation. Manipulation could be accomplished via trapping or pushing a particle due to optical field. Empirical determination of optical force is often needed to ensure efficient operation of manipulation. The external force applied to a trapped particle in a microfluidic channel is a combination of optical and drag forces. The optical force can be found by measuring the particle velocity for a certain laser power level and a multiplicative correction factor is applied for the proximity of the particle to the channel surface. This method is not accurate especially for small microfluidic geometries where the particle size is in Mie regime and is comparable to channel cross section. In this work, we propose to use Boundary Element Method (BEM) to simulate fluid flow within the micro-channel with the presence of the particle to predict drag force. Pushing experiments were performed in a dual-beam optical trap and particlea's position information was extracted. The drag force acting on the particle was then obtained using BEM and other analytical expressions, and was compared to the calculated optical force. BEM was able to predict the behavior of the optical force due to the inclusion of all the channel walls. © 2015 SPIE.Item Open Access Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes(Elsevier, 2010-10-13) Arslan, E.; Bütün, S.; Şafak, Y.; Çakmak, H.; Yu, H.; Özbay, EkmelThe current transport mechanisms in (Ni/Au)-AlN/GaN Schottky barrier diodes (SBDs) were investigated by the use of current-voltage characteristics in the temperature range of 80-380 K. In order to determine the true current transport mechanisms for (Ni/Au)-AlN/GaN SBDs, by taking the Js(tunnel), E 0, and Rs as adjustable fit parameters, the experimental J-V data were fitted to the analytical expressions given for the current transport mechanisms in a wide range of applied biases and at different temperatures. Fitting results show the weak temperature dependent behavior in the saturation current and the temperature independent behavior of the tunneling parameters in this temperature range. Therefore, it has been concluded that the mechanism of charge transport in (Ni/Au)-AlN/GaN SBDs, along the dislocations intersecting the space charge region, is performed by tunneling. In addition, in order to analyze the trapping effects in (Ni/Au)-AlN/GaN SBDs, the capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics were measured in the frequency range 0.7-50 kHz. A detailed analysis of the frequency-dependent capacitance and conductance data was performed, assuming the models in which traps are located at the heterojunction interface. The density (Dt) and time constants (τt) of the trap states have been determined as a function of energy separation from the conduction-band edge (Ec - Et) as Dt≅ (5-8)×10 12eV-1 cm-2andτt≅(43-102) μs, respectively.Item Open Access Current-Transport mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures(Elsevier, 2013) Arslan, E.; Turan, S.; Gökden, S.; Teke, A.; Özbay, EkmelCurrent-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport mechanisms in DC heterostructure. In this model, two Schottky diodes are in series: one is a metal-semiconductor barrier layer (AIInN) Schottky diode and the other is an equivalent Schottky diode, which is due to the heterojunction between the AlN and GaN layer. Capacitance-voltage studies show the formation of a two-dimensional electron gas at the AlN/GaN interface in the SC and the first AlN/GaN interface from the substrate direction in the DC. In order to determine the current mechanisms for SC and DC heterostructures, we fit the analytical expressions given for the tunneling current to the experimental current-voltage data over a wide range of applied biases as well as at different temperatures. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. At both a low and medium forward-bias voltage values for Schottky contacts on AlInN/AlN/GaN/AlN/GaN DC and AlInN/AlN/GaN SC heterostructures, the data are consistent with electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-420 K.Item Open Access A performance enhanced power divider structure(IEEE, 2014) Taş, Vahdettin; Atalar, AbdullahWe analyze the bandwidth capability of a divider with a series RLC circuit at the isolation arm. Analytical expressions for optimal component values are given. Bandwidth limiting effect of the pad capacitances of the chip resistors is analyzed. These parasitic capacitors are compensated by the proposed structure. Broadband characteristic of the new divider is verified by experimental results.Item Open Access A simple analytical expression for the gradient induced potential on active implants during MRI(2012) Turk, E.A.; Kopanoglu, E.; Guney, S.; Bugdayci, K.E.; Ider, Y. Z.; Erturk, V. B.; Atalar, ErginDuring magnetic resonance imaging, there is an interaction between the time-varying magnetic fields and the active implantable medical devices (AIMD). In this study, in order to express the nature of this interaction, simplified analytical expressions for the electric fields induced by time-varying magnetic fields are derived inside a homogeneous cylindrical volume. With these analytical expressions, the gradient induced potential on the electrodes of the AIMD can be approximately calculated if the position of the lead inside the body is known. By utilizing the fact that gradient coils produce linear magnetic field in a volume of interest, the simplified closed form electric field expressions are defined. Using these simplified expressions, the induced potential on an implant electrode has been computed approximately for various lead positions on a cylindrical phantom and verified by comparing with the measured potentials for these sample conditions. In addition, the validity of the method was tested with isolated frog leg stimulation experiments. As a result, these simplified expressions may help in assessing the gradient-induced stimulation risk to the patients with implants.