Browsing by Author "Zhao, W."

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    The dark side of marital leadership: Evidence from China
    (Elsevier BV, 2021-10) Yao, S.; Zhao, W.; Şensoy, Ahmet; Cheng, F.; Goodell, J. W.
    Using a unique dataset of Chinese private firms, we find that marital leadership is associated with higher propensity for financial fraud. We examine the potential economic mechanisms that lead to this result, finding that weak internal supervision and inefficient decision-making provide crucial linkages between marital leadership and financial fraud. However, well-functioning corporate governance mechanisms reduce the negative effects of marital leadership. Our findings provide important empirical evidence for the effect of family involvement in corporate governance and contribute to the literature on the determinants of financial fraud in listed firms.
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    Trion-mediated förster resonance energy transfer and optical gating effect in WS2/hBN/MoSe2 heterojunction
    (American Chemical Society, 2020) Hu, Z.; Hernández-Martínez, P. L.; Liu, X.; Amara, M. R.; Zhao, W.; Watanabe, K.; Taniguchi, T.; Demir, Hilmi Volkan
    van der Waals two-dimensional layered heterostructures have recently emerged as a platform, where the interlayer couplings give rise to interesting physics and multifunctionalities in optoelectronics. Such couplings can be rationally controlled by dielectric, separation, and stacking angles, which affect the overall charge or energy-transfer processes, and emergent potential landscape for twistronics. Herein, we report the efficient Förster resonance energy transfer (FRET) in WS2/ hBN/MoSe2 heterostructure, probed by both steady-state and timeresolved optical spectroscopy. We clarified the evolution behavior of the electron−hole pairs and free electrons from the trions, that is, ∼59.9% of the electron−hole pairs could transfer into MoSe2 by FRET channels (∼38 ps) while the free electrons accumulate at the WS2/hBN interface to photogate MoSe2. This study presents a clear picture of the FRET process in two-dimensional transition-metal dichalcogenides’ heterojunctions, which establishes the scientific foundation for developing the related heterojunction optoelectronic devices.